IXTA200N075T7 IXYS, IXTA200N075T7 Datasheet - Page 5

MOSFET N-CH 75V 200A TO-263-7

IXTA200N075T7

Manufacturer Part Number
IXTA200N075T7
Description
MOSFET N-CH 75V 200A TO-263-7
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTA200N075T7

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
200A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
160nC @ 10V
Input Capacitance (ciss) @ Vds
6800pF @ 25V
Power - Max
430W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (6 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.005 Ohms
Drain-source Breakdown Voltage
75 V
Continuous Drain Current
200 A
Power Dissipation
430 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
75
Id(cont), Tc=25°c, (a)
200
Rds(on), Max, Tj=25°c, (?)
0.0050
Ciss, Typ, (pf)
6800
Qg, Typ, (nc)
160
Trr, Typ, (ns)
80
Trr, Max, (ns)
-
Pd, (w)
430
Rthjc, Max, (k/w)
0.35
Package Style
TO-263 (7-lead)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2006 IXYS CORPORATION All rights reserved
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120
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100
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48
90
80
70
60
50
40
30
20
65
60
55
50
45
40
35
30
25
20
25
25
4
Switching Times vs. Gate Resistance
t
R
V
Switching Times vs. Drain Current
f
I
t
T
V
G
DS
35
D
r
J
6
DS
= 5 Ω , V
Rise Time vs. Junction Temperature
= 25A
= 125ºC, V
= 38V
30
= 38V
Fig. 17. Resistive Turn-off
I
D
Fig. 15. Resistive Turn-on
45
= 50A
8
t
d(off)
GS
Fig. 13. Resistive Turn-on
t
d(on)
= 10V
I
55
T
I
GS
- - - -
D
D
R
J
10
- - - -
35
- Amperes
= 50A
- Degrees Centigrade
= 10V
G
- Ohms
65
I
D
12
= 25A
75
T
40
J
14
= 25ºC
T
85
J
= 125ºC
16
45
95
R
V
V
18
G
GS
DS
105
= 5 Ω
= 38V
= 10V
50
20
115
95
90
85
80
75
70
65
60
55
50
45
60
57
54
51
48
45
42
39
36
33
30
27
125
170
150
130
110
58
57
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55
54
53
52
51
50
49
48
90
70
50
70
65
60
55
50
45
40
35
30
25
20
25
4
25
Switching Times vs. Junction Temperature
Switching Times vs. Gate Resistance
t
T
V
35
f
R
V
V
J
DS
6
= 125ºC, V
G
GS
DS
= 38V
= 5 Ω
= 38V
= 10V
45
Fig. 18. Resistive Turn-off
Fig. 16. Resistive Turn-off
30
T
8
Rise Time vs. Drain Current
J
t
Fig. 14. Resistive Turn-on
- Degrees Centigrade
d(off)
55
GS
- - - -
R
10
= 10V
65
G
I
D
- Ohms
35
I
- Amperes
D
12
75
I
IXTA
= 25A
D
= 50A
85
t
R
V
14
f
G
DS
T
T
IXYS REF: T_200N075T (5V) 6-20-06.xls
J
J
I
= 5 Ω , V
D
= 25ºC
= 125ºC
= 38V
40
200N075T7
95
= 25A
16
t
d(off)
105 115 125
GS
I
D
- - - -
= 10V
18
= 50A
45
20
300
260
220
180
140
100
60
95
90
85
80
75
70
65
60
55
50
45
50

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