IXTA200N085T7 IXYS, IXTA200N085T7 Datasheet

MOSFET N-CH 85V 200A TO-263-7

IXTA200N085T7

Manufacturer Part Number
IXTA200N085T7
Description
MOSFET N-CH 85V 200A TO-263-7
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTA200N085T7

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
85V
Current - Continuous Drain (id) @ 25° C
200A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
152nC @ 10V
Input Capacitance (ciss) @ Vds
7600pF @ 25V
Power - Max
480W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (6 leads + tab)
Configuration
Single Quint Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.005 Ohms
Drain-source Breakdown Voltage
85 V
Continuous Drain Current
200 A
Power Dissipation
480 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
85
Id(cont), Tc=25°c, (a)
200
Rds(on), Max, Tj=25°c, (?)
0.0050
Ciss, Typ, (pf)
7600
Qg, Typ, (nc)
152
Trr, Typ, (ns)
90
Trr, Max, (ns)
-
Pd, (w)
480
Rthjc, Max, (k/w)
0.31
Package Style
TO-263 (7-lead)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TrenchMV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
T
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS CORPORATION All rights reserved
D25
LRMS
DM
AR
GSS
DSS
L
SOLD
DGR
D
J
JM
stg
GS(th)
DSS
GSM
AS
DS(on)
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Transient
T
Lead Limited, RMS
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Test Conditions
V
V
V
V
V
S
V
C
C
C
C
C
GS
J
J
J
DS
GS
DS
GS
GS
= 25°C to 175°C
= 25°C to 175°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
≤ 175°C, R
= 25°C
= 0 V, I
= V
= ± 20 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/μs, V
GS
TM
DSS
, I
D
D
= 250 μA
D
= 250 μA
= 25 A, Note 1
G
DS
= 5 Ω
= 0 V
Preliminary Technical Information
GS
= 1 MΩ
DD
IXTA200N085T7
T
≤ V
J
= 150°C
DSS
JM
Min.
2.0
85
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
Typ.
4.0
± 20
200
120
540
480
300
260
175
1.0
85
85
25
± 200
3
3
250
Max.
4.0
5.0
5
V/ns
mJ
nA
μA
μA
°C
°C
°C
°C
°C
W
V
V
V
A
A
V
A
A
g
V
TO-263 (7-lead) (IXTA..7)
Features
Advantages
Applications
Pin-out:1 - Gate
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Easy to mount
Space savings
High power density
- Motor Drives
- 42V Power Bus
- ABS Systems
Primary Switch for 24V and 48V
V
I
R
DC/DC Converters and Off-line UPS
High Current Switching
D25
Systems
Applications
Automotive
DSS
DS(on)
1
2, 3 - Source
4 - NC (cut)
5,6,7 - Source
TAB (8) - Drain
7
=
= 200
≤ ≤ ≤ ≤ ≤
5.0 mΩ Ω Ω Ω Ω
85
DS99702 (11/06)
(TAB)
A
V

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IXTA200N085T7 Summary of contents

Page 1

... ± GSS DSS DS DSS Note 1 DS(on © 2006 IXYS CORPORATION All rights reserved Preliminary Technical Information IXTA200N085T7 Maximum Ratings MΩ ± 20 200 120 540 JM 25 1.0 ≤ DSS 480 -55 ... +175 175 -55 ... +175 300 260 Characteristic Values Min. Typ. 85 2.0 ± 200 T = 150° ...

Page 2

... DSS D 42 Characteristic Values Min. Typ The Technical Specifications 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA200N085T7 TO-263 (7-lead) (IXTA...7) Outline Max Pins Gate Source 4 - Drain 0.31 °C/W 5,6,7 - Source Tab (8) - Drain Max. 200 A 540 A 1 ...

Page 3

... 1.4 1.6 1.8 2 2.2 2.4 = 100A Value D 140 120 T = 175ºC J 100 T = 25ºC J 200 240 280 320 IXTA200N085T7 Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 2 10V GS 2.4 2.2 2.0 1 ...

Page 4

... IXYS reserves the right to change limits, test conditions, and dimensions -40ºC J 25ºC 150ºC 5 5 25ºC J 0.9 1 1.1 1.2 1.3 1.00 C iss 0.10 C oss C rss 0. IXTA200N085T7 Fig. 8. Transconductance 180 160 40ºC J 140 25ºC 120 100 150º 120 150 180 I - Amperes D Fig. 10. Gate Charge ...

Page 5

... T = 25ºC J 100 180 95 160 125º 140 80 120 75 100 =125º 25º IXTA200N085T7 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current T = 25º Ω 10V 43V 125º Amperes D Fig. 16. Resistive Turn-off I = 25A d(off Ω 10V 43V 50A D 35 ...

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