IXTQ200N085T IXYS, IXTQ200N085T Datasheet

MOSFET N-CH 85V 200A TO-3P

IXTQ200N085T

Manufacturer Part Number
IXTQ200N085T
Description
MOSFET N-CH 85V 200A TO-3P
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTQ200N085T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
85V
Current - Continuous Drain (id) @ 25° C
200A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
152nC @ 10V
Input Capacitance (ciss) @ Vds
7600pF @ 25V
Power - Max
480W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.005 Ohms
Drain-source Breakdown Voltage
85 V
Continuous Drain Current
200 A
Power Dissipation
480 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
85
Id(cont), Tc=25°c, (a)
200
Rds(on), Max, Tj=25°c, (?)
0.0050
Ciss, Typ, (pf)
7600
Qg, Typ, (nc)
152
Trr, Typ, (ns)
90
Trr, Max, (ns)
-
Pd, (w)
480
Rthjc, Max, (k/w)
0.31
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTQ200N085T
Manufacturer:
IXYS
Quantity:
210
TrenchMV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS CORPORATION All rights reserved
D25
LRMS
DM
AR
GSS
DSS
L
SOLD
DGR
D
J
JM
stg
GS(th)
DSS
GSM
AS
DS(on)
d
J
DSS
= 25° C unless otherwise specified)
Test Conditions
T
T
Transient
T
Lead Current Limit, RMS
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque
TO-3P
TO-247
Test Conditions
V
V
V
V
V
V
S
C
C
C
C
C
GS
J
J
J
DS
GS
DS
GS
GS
= 25° C to 175° C
= 25° C to 175° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
≤ I
≤ 175° C, R
= 25° C
= 0 V, I
= V
= ± 20 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
TM
DSS
, I
D
D
= 250 µA
D
= 250 µA
G
= 25 A, Notes 1, 2
DS
= 5 Ω
= 0 V
Preliminary Technical Information
GS
= 1 MΩ
DD
T
J
≤ V
= 150° C
DSS
IXTH200N085T
IXTQ200N085T
JM
Min.
2.0
85
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
1.13 / 10 Nm/lb.in.
Typ.
4.0
± 20
200
540
480
300
260
175
1.0
5.5
85
85
75
25
± 200
3
6
250
Max.
4.0
5.0
5
V/ns
m Ω
nA
µA
µA
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
V
A
g
g
V
J
Features
Advantages
Applications
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
TO-247 (IXTH)
TO-3P (IXTQ)
Easy to mount
Space savings
High power density
- Motor Drives
- 42V Power Bus
- ABS Systems
Primary Switch for 24V and 48V
DC/DC Converters and Off-line UPS
V
I
R
High Current Switching
G = Gate
S = Source
D25
Systems
Applications
Automotive
G
DSS
DS(on)
D
G
S
D
S
=
= 200
≤ ≤ ≤ ≤ ≤
D = Drain
TAB = Drain
5.0 m Ω Ω Ω Ω Ω
85
DS99703 (11/06)
(TAB)
(TAB)
A
V

IXTQ200N085T Summary of contents

Page 1

... ± GSS DSS DS DSS Notes 1, 2 DS(on © 2006 IXYS CORPORATION All rights reserved Preliminary Technical Information IXTH200N085T IXTQ200N085T Maximum Ratings MΩ ± 20 200 75 540 JM 25 1.0 ≤ DSS 480 -55 ... +175 175 -55 ... +175 300 260 1. Nm/lb.in. 5.5 6 Characteristic Values Min. Typ. ...

Page 2

... DSS 152 , DSS D 42 0.25 Characteristic Values Min. Typ Kelvin test contact DS(on) 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH200N085T IXTQ200N085T TO-247AD Outline Max Terminals Gate 3 - Source nC Dim. Millimeter nC Min. Max. A 4.7 5 2.2 2. 2.2 2.6 0.31 ° ...

Page 3

... Normalized to I DS(on) vs. Drain Current 2.8 2.6 2.4 2 10V GS 1.8 15V - - - - 1.6 1.4 1.2 1 0.8 0 120 160 I - Amperes D © 2006 IXYS CORPORATION All rights reserved 300 = 10V GS 270 8V 7V 240 210 180 6V 150 120 5V 0.6 0.7 0.8 0.9 1 1.1 = 10V 1.4 1 ...

Page 4

... IXYS reserves the right to change limits, test conditions, and dimensions -40ºC J 25ºC 150ºC 5 5 25ºC J 0.9 1 1.1 1.2 1.3 1.00 C iss 0.10 C oss C rss 0. IXTH200N085T IXTQ200N085T Fig. 8. Transconductance 180 160 40ºC J 140 25ºC 120 100 150º 120 150 180 I - Amperes D Fig. 10. Gate Charge 10 ...

Page 5

... 43V DS 140 120 I = 50A D 100 Ohms G Fig. 17. Resistive Turn-off Switching Times vs. Drain Current d(off Ω 10V 43V Amperes D © 2006 IXYS CORPORATION All rights reserved 100 Ω 10V 43V 105 115 125 25A 105 200 T = 25ºC J 100 180 95 160 125ºC ...

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