IXTQ200N085T IXYS, IXTQ200N085T Datasheet - Page 4

MOSFET N-CH 85V 200A TO-3P

IXTQ200N085T

Manufacturer Part Number
IXTQ200N085T
Description
MOSFET N-CH 85V 200A TO-3P
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTQ200N085T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
85V
Current - Continuous Drain (id) @ 25° C
200A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
152nC @ 10V
Input Capacitance (ciss) @ Vds
7600pF @ 25V
Power - Max
480W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.005 Ohms
Drain-source Breakdown Voltage
85 V
Continuous Drain Current
200 A
Power Dissipation
480 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
85
Id(cont), Tc=25°c, (a)
200
Rds(on), Max, Tj=25°c, (?)
0.0050
Ciss, Typ, (pf)
7600
Qg, Typ, (nc)
152
Trr, Typ, (ns)
90
Trr, Max, (ns)
-
Pd, (w)
480
Rthjc, Max, (k/w)
0.31
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
270
240
210
180
150
120
100
270
240
210
180
150
120
90
60
30
90
60
30
0
0
0.4
0
3
f = 1 MHz
0.5
5
3.5
Fig. 9. Forward Voltage Drop of
0.6
10
Fig. 7. Input Admittance
Fig. 11. Capacitance
4
0.7
T
Intrinsic Diode
J
15
= 150ºC
V
V
V
SD
GS
DS
4.5
0.8
- Volts
- Volts
- Volts
20
C iss
C oss
C rss
0.9
5
25
T
T
J
J
1
= 25ºC
= -40ºC
150ºC
5.5
25ºC
30
1.1
6
35
1.2
1.3
6.5
40
1.00
0.10
0.01
180
160
140
120
100
10
80
60
40
20
0.0001
9
8
7
6
5
4
3
2
1
0
0
0
0
V
I
I
D
G
DS
30
= 25A
= 10mA
20
Fig. 12. Maximum Transient Thermal
= 43V
0.001
60
Fig. 8. Transconductance
40
90
Q
Pulse Width - Seconds
Fig. 10. Gate Charge
G
- NanoCoulombs
I
60
0.01
D
120
Impedance
- Amperes
T
J
= - 40ºC
150
80
150ºC
25ºC
IXTQ200N085T
IXTH200N085T
0.1
180
100
210
120
240
1
140
270
160
10
300

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