IXTA6N50D2 IXYS, IXTA6N50D2 Datasheet - Page 2
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IXTA6N50D2
Manufacturer Part Number
IXTA6N50D2
Description
MOSFET N-CH 500V 6A D2PAK
Manufacturer
IXYS
Datasheet
1.IXTH6N50D2.pdf
(5 pages)
Specifications of IXTA6N50D2
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
500 mOhm @ 3A, 0V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
6A
Gate Charge (qg) @ Vgs
96nC @ 5V
Input Capacitance (ciss) @ Vds
2800pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Vds, Max, (v)
500
Id(on), Min, (a)
6
Rds(on), Max, (?)
0.5
Vgs(off), Max, (v)
-4
Ciss, Typ, (pf)
2800
Crss, Typ, (pf)
64
Qg, Typ, (nc)
96
Pd, (w)
300
Rthjc, Max, (ºc/w)
0.41
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTA6N50D2
Manufacturer:
IXYS
Quantity:
1 200
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Safe-Operating-Area Specification
Symbol
SOA
Source-Drain Diode
Symbol
(T
V
t
I
Q
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
TO-263 (IXTA) Outline
V
V
Resistive Switching Times
V
R
V
TO-220
Test Conditions
V
I
I
V
Test Conditions
Test Conditions
TO-247
F
F
DS
GS
GS
GS
DS
R
G
= 6A, V
= 3A, -di/dt = 100A/μs
= 100V, V
PRELIMINARY TECHNICAL INFORMATION
= 30V, I
= -10V, V
= ±5V, V
= 2.4Ω (External)
= 5V, V
= 400V, I
1. Gate
2. Drain
3. Source
4. Drain
GS
DS
D
DS
= -10V, Note 1
GS
= 3A, Note 1
DS
D
= 250V, I
= 250V, I
= 0.45A, T
= -10V
4,835,592
4,881,106
= 25V, f = 1MHz
D
D
4,931,844
5,017,508
5,034,796
= 3A
= 3A
C
= 75°C, Tp = 5s
Dim.
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
5,049,961
5,063,307
5,187,117
14.61
Min.
4.06
0.51
1.14
0.40
1.14
8.64
8.00
9.65
6.22
2.54
2.29
1.02
1.27
Millimeter
10.41
15.88
Max.
BSC
4.83
0.99
1.40
0.74
1.40
9.65
8.89
8.13
2.79
1.40
1.78
5,237,481
5,381,025
5,486,715
Characteristic Values
2.8
Min.
Characteristic Values
Min.
180
Min.
Min.
.160
.020
.045
.016
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
Inches
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
Max.
BSC
.190
.039
.055
.029
.055
.380
.320
.405
.320
.625
.110
.055
.070
2800
0.50
Typ.
0.21
255
4.5
350
Typ.
2.8
Typ.
64
28
72
82
43
96
11
48
0.8
16
Max.
0.41 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
Max.
1.3
°C/W
°C/W
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
ns
W
S
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
IXTA6N50D2 IXTP6N50D2
TO-220 (IXTP) Outline
TO-247 (IXTH) AD Outline
1 = Gate
2 = Drain
3 = Source
Pins: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
3 - Source
7,005,734 B2
7,063,975 B2
IXTH6N50D2
2 - Drain
4 - Drain
7,157,338B2