IXTQ10P50P IXYS, IXTQ10P50P Datasheet - Page 5

• Manufacturer Part Number: IXTQ10P50P
• Description: MOSFET P-CH 500V 10A TO-3P
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTQ10P50P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 2840pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 1 Ohms
• Drain-source Breakdown Voltage: - 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): -500
• Id(cont), Tc=25°c, (a): -10
• Rds(on), Max, Tj=25°c, (?): 1
• Ciss, Typ, (pf): 2670
• Qg, Typ, (nc): 50
• Trr, Typ, (ns): 414
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.5
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2009 IXYS CORPORATION, All Rights Reserved
10,000
1,000
100
-16
-14
-12
-10
-30
-25
-20
-15
-10
10
-8
-6
-4
-2
-5
0
0
-3.5
-0.5
0
f
= 1 MHz
-5
-4.0
-1
Fig. 9. Forward Voltage Drop of
-10
Fig. 7. Input Admittance
Fig. 11. Capacitance
-1.5
-4.5
Intrinsic Diode
-15
T
V
J
DS
V
V
= 125ºC
GS
SD
- 40ºC
T
- Volts
25ºC
J
-5.0
- Volts
-20
- Volts
= 125ºC
-2
-25
-2.5
-5.5
-30
T
C oss
C rss
J
C iss
-6.0
-3
= 25ºC
-35
-3.5
-6.5
-40
-
100.0
-
-
10.0
-
-10
1.0
0.1
24
22
20
18
16
14
12
10
-9
-8
-7
-6
-5
-4
-3
-2
-1
8
6
4
2
0
0
-
10
0
0
R
Fig. 12. Forward-Bias Safe Operating Area
DS(on)
T
T
Single Pulse
V
I
I
J
C
-2
D
G
5
DS
= 150ºC
= 25ºC
= - 5A
= -1mA
= - 250V
Limit
10
-4
Fig. 8. Transconductance
IXTA10P50P IXTH10P50P
IXTP10P50P IXTQ10P50P
Fig. 10. Gate Charge
15
-6
Q
I
D
G
V
20
- Amperes
DS
- NanoCoulombs
-8
- Volts
-
100
25
-10
DC
30
T
-12
J
= - 40ºC
35
25ºC
125ºC
-14
40
-16
25µs
100µs
1ms
10ms
100ms
45
-
1000
-18
50