IXTV250N075TS IXYS, IXTV250N075TS Datasheet

MOSFET N-CH 75V 250A PLUS220SMD

IXTV250N075TS

Manufacturer Part Number
IXTV250N075TS
Description
MOSFET N-CH 75V 250A PLUS220SMD
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTV250N075TS

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
250A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
9900pF @ 25V
Power - Max
550W
Mounting Type
Surface Mount
Package / Case
PLUS-220SMD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.004 Ohms
Drain-source Breakdown Voltage
75 V
Continuous Drain Current
250 A
Power Dissipation
550 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
75
Id(cont), Tc=25°c, (a)
250
Rds(on), Max, Tj=25°c, (?)
0.0040
Ciss, Typ, (pf)
9900
Qg, Typ, (nc)
200
Trr, Typ, (ns)
80
Trr, Max, (ns)
-
Pd, (w)
550
Rthjc, Max, (k/w)
0.27
Package Style
PLUS220 SMD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2006 IXYS CORPORATION All rights reserved
TrenchMV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
T
F
Weight
Symbol
(T
BV
V
I
I
R
D25
LRMS
DM
AR
GSS
DSS
DGR
D
J
JM
stg
L
SOLD
C
GS(th)
DSS
GSM
AS
DS(on)
J
DSS
= 25° C unless otherwise specified)
Test Conditions
T
T
Transient
T
Lead Current Limit, RMS
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting force (PLUS220)
Test Conditions
V
V
V
V
V
V
S
C
C
C
C
C
GS
J
J
J
DS
GS
DS
GS
GS
= 25° C to 175° C
= 25° C to 175° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
≤ I
≤ 175° C, R
= 25° C
= 0 V, I
= V
= ± 20 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
TM
DSS
, I
D
D
= 250 µA
D
= 250 µA
= 50 A, Notes 1, 2
G
DS
= 3.3 Ω
= 0 V
Preliminary Technical Information
GS
= 1 MΩ
DD
T
J
≤ V
= 150° C
IXTV250N075T
IXTV250N075TS
DSS
JM
11...65 /2.5...15
Min.
2.0
75
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
Typ.
3.3
± 20
250
560
550
175
300
260
1.5
75
75
75
40
± 200
3
3
250
Max.
4.0
4.0
25
N/lb.
V/ns
m Ω
nA
µA
µA
°C
°C
°C
°C
°C
W
V
V
V
A
A
V
A
A
g
V
J
PLUS220 (IXTV)
PLUS220SMD (IXTV_S)
G = Gate
S = Source
Features
Advantages
Applications
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Easy to mount
Space savings
High power density
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
Primary Switch for 24V and 48V
DC/DC Converters and Off-line UPS
V
I
R
High Current Switching
D25
Systems
Applications
DSS
DS(on)
G
D
G
S
=
= 250
≤ ≤ ≤ ≤ ≤
S
TAB = Drain
D = Drain
4.0 mΩ Ω Ω Ω Ω
75
D (TAB)
DS99696(11/06)
D (TAB)
A
V

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IXTV250N075TS Summary of contents

Page 1

... GSS DSS DS DSS Notes 1, 2 DS(on © 2006 IXYS CORPORATION All rights reserved Preliminary Technical Information IXTV250N075T IXTV250N075TS Maximum Ratings MΩ ± 20 250 75 560 JM 40 1.5 ≤ DSS 550 -55 ... +175 175 -55 ... +175 300 260 11...65 /2.5...15 3 Characteristic Values Min. ...

Page 2

... DSS D 60 .25 Characteristic Min. Typ Kelvin test contact DS(on) 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTV250N075T IXTV250N075TS PLUS220 (IXTV) Outline Max Terminals Gate 3 - Source 0.27 °C/W °C/W Max. 250 A PLUS220SMD (IXTV_S) Outline 560 A 1 6,404,065 B1 ...

Page 3

... 1.2 1.4 1.6 1 125A Value D = 175º 25ºC J 200 250 300 350 IXTV250N075T IXTV250N075TS Fig. 2. Extended Output Characteristics @ 25ºC 350 V = 10V GS 9V 300 8V 250 7V 200 6V 150 100 0 Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 2 ...

Page 4

... IXYS reserves the right to change limits, test conditions, and dimensions. 180 160 140 120 100 5 25ºC J 0.9 1 1.1 1.2 1.3 1.00 C iss 0.10 C oss C rss 0. IXTV250N075T IXTV250N075TS Fig. 8. Transconductance 40ºC J 25ºC 150º 100 125 150 I - Amperes D Fig. 10. Gate Charge V = 37. 25A 10mA ...

Page 5

... Amperes D © 2006 IXYS CORPORATION All rights reserved R = 3.3 Ω 10V 37. 105 115 125 50A, 25A 100 IXTV250N075T IXTV250N075TS Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 3.3 Ω 10V 37. Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature d(off 3.3 Ω 10V G ...

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