IXTT20P50P IXYS, IXTT20P50P Datasheet

IXTT20P50P

Manufacturer Part Number

IXTT20P50P

Description

MOSFET P-CH 500V 20A TO-268

Manufacturer

IXYS

Series

PolarP™r

Datasheet

1.IXTH20P50P.pdf (5 pages)

Specifications of IXTT20P50P

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

450 mOhm @ 500mA, 10V

Drain To Source Voltage (vdss)

500V

Current - Continuous Drain (id) @ 25° C

20A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

103nC @ 10V

Input Capacitance (ciss) @ Vds

5120pF @ 25V

Power - Max

460W

Mounting Type

Surface Mount

Package / Case

TO-268

Vdss, Max, (v)

-500.0

Id(cont), Tc=25°c, (a)

-20.0

Rds(on), Max, Tj=25°c, (?)

0.450

Ciss, Typ, (pf)

5120

Qg, Typ, (nc)

103

Trr, Typ, (ns)

406

Pd, (w)

460

Rthjc, Max, (k/w)

0.27

Package Style

TO-268

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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PolarP

Power MOSFET

P-Channel Enhancement Mode

Avalanche Rated

Symbol

dV/dt

Weight

Symbol

D25

GSS

DSS

stg

SOLD

DSS

DGR

GSS

GSM

GS(th)

DS(on)

DSS

= 25°C, Unless Otherwise Specified)

TO-247

Test Conditions

Continuous

Transient

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

Mounting Torque (TO-247)

TO-268

Test Conditions

= 25°C to 150°C

= 25°C to 150°C, R

= 25°C

= 25°C, Pulse Width Limited by T

= 25°C

≤ I

= 25°C

= 0V, I

= V

= ±20V, V

= V

= -10V, I

, V

DSS,

, I

= - 250 μA

≤ V

= - 250μA

= 0.5 • I

= 0V

DSS

= 0V

, T

D25

≤ 150°C

, Note 1

= 1MΩ

= 125°C

IXTH20P50P

IXTT20P50P

- 500

- 55 ... +150

- 2.0

Characteristic Values

Min.

Maximum Ratings

1.13 / 10

- 500

- 20

- 60

- 20

±20

±30

460

150

300

260

2.5

6.0

4.0

Typ.

- 200 μA

±100 nA

- 4.0

Nm/lb.in.

- 25 μA

450 mΩ

Max.

V/ns

°C

TO-247 (IXTH)

G = Gate

S = Source

Features

Advantages

Applications

TO-268 (IXTT)

D25

International Standard Packages

Avalanche Rated

Rugged PolarP

Low Package Inductance

Fast Intrinsic Diode

Easy to Mount

Space Savings

High Power Density

High-Side Switches

Push Pull Amplifiers

DC Choppers

Automatic Test Equipment

Current Regulators

DS(on)

DSS

≤ ≤ ≤ ≤ ≤

TAB = Drain

- 500V

- 20A

Process

450mΩ Ω Ω Ω Ω

= Drain

DS99984A(3/09)

(TAB)

Related parts for IXTT20P50P

IXTT20P50P Summary of contents

Page 1

... ±20V GSS DSS DS DSS -10V 0.5 • I DS(on © 2009 IXYS CORPORATION, All Rights Reserved IXTH20P50P IXTT20P50P Maximum Ratings - 500 = 1MΩ - 500 GS ±20 ± 2.5 ≤ 150° 460 - 55 ... +150 150 - 55 ... +150 300 260 1. 6.0 4.0 Characteristic Values Min. Typ. - 500 - 2 ...

Page 2

... R 4. 2.8 V TO-268 (IXTT) Outline ns μC A 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXTH20P50P IXTT20P50P ∅ Drain Inches Max. Min. Max. 5.3 .185 .209 2.54 .087 .102 2.6 .059 .098 1.4 .040 .055 2.13 .065 ...

Page 3

... Fig. 2. Extended Output Characteristics @ 25º -10V -12 -15 - Volts DS Fig Normalized to I DS(on) Junction Temperature V = -10V 20A D -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature - -50 - Degrees Centigrade J IXTH20P50P IXTT20P50P - -21 -24 -27 -30 = -10A vs -10A D 100 125 150 100 125 150 IXYS REF: T_20P50P(B7) 5-13-08 ...

Page 4

... T = 25º -2.5 -3.0 -3.5 - 100.0 C iss - 10.0 C oss - 1.0 C rss - 0.1 -25 -30 -35 - IXTH20P50P IXTT20P50P Fig. 8. Transconductance -5 -10 -15 -20 - Amperes D Fig. 10. Gate Charge V = -250V 10A -1mA NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area R Limit DS(on 150º 25ºC C Single Pulse ...

Page 5

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