IXTR16P60P IXYS, IXTR16P60P Datasheet - Page 5

• Manufacturer Part Number: IXTR16P60P
• Description: MOSFET P-CH 600V 10A ISOPLUS247
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTR16P60P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 790 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 92nC @ 10V
• Input Capacitance (ciss) @ Vds: 5120pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247™
• Vdss, Max, (v): -600.0
• Id(cont), Tc=25°c, (a): -10.0
• Rds(on), Max, Tj=25°c, (?): 0.790
• Ciss, Typ, (pf): 5120
• Qg, Typ, (nc): 92
• Trr, Typ, (ns): 440
• Pd, (w): 190
• Rthjc, Max, (k/w): 0.66
• Package Style: ISOPLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXTR16P60P
Fig. 13. Maximum Transient Thermal Impedance
1.000
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: T_16P60P (B7) 6-03-08