IXTH10P50 IXYS, IXTH10P50 Datasheet

MOSFET P-CH 500V 10A TO-247AD

IXTH10P50

Manufacturer Part Number
IXTH10P50
Description
MOSFET P-CH 500V 10A TO-247AD
Manufacturer
IXYS
Datasheet

Specifications of IXTH10P50

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
900 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
160nC @ 10V
Input Capacitance (ciss) @ Vds
4700pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247
Vdss, Max, (v)
-500
Id(cont), Tc=25°c, (a)
-10
Rds(on), Max, Tj=25°c, (?)
0.9
Ciss, Typ, (pf)
4700
Qg, Typ, (nc)
160
Trr, Typ, (ns)
500
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IXTH10P50
Manufacturer:
IXYS
Quantity:
18 000
Price:
Standard Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
© 2002 IXYS All rights reserved
DM
D25
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
D
GS(th)
DSS
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247 AD
TO-268
Test Conditions
V
BV
V
V
V
V
V
V
R
C
C
C
C
C
J
J
GS(th)
GS
DS
GS
DS
GS
GS
DS(on)
DSS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= -10 V, I
Temperature Coefficient
Temperature Coefficient
Temperature Coefficient
GS
, I
D
D
DC
= -250 µA
= -250 µA
DSS
D
, V
= 0.5 • I
DS
= 0
(TO-247)
GS
D25
= 1 MΩ
T
T
10P50
11P50
(T
J
J
= 25°C
= 125°C
J
= 25°C, unless otherwise specified)
J
IXTH/IXTT 10P50
IXTH/IXTT 11P50
-500
min.
-3.0
10P50
11P50
10P50
11P50
10P50
11P50
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
-0.122
0.054
1.13/10 Nm/lb.in.
typ.
-500
-500
±20
±30
300
150
300
-10
-11
-40
-44
-10
-11
30
6
4
±100
max.
-200
0.90
0.75
-5.0
0.6 %/K
-1
%/K
%/K
mA
mJ
µA
° C
° C
nA
°C
°C
W
V
V
V
V
A
A
A
A
A
A
V
V
g
g
TO-247 AD (IXTH)
TO-268 (IXTT) Case Style
Features
Advantages
G = Gate
S = Source
-500 V -10 A 0.90 Ω
-500 V -11 A 0.75 Ω
V
International standard packages
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
DSS
DS (on)
G
HDMOS
I
D = Drain
TAB = Drain
D25
S
TM
process
R
94535F (7/02)
D
D
DS(on)
(TAB)
(TAB)

Related parts for IXTH10P50

IXTH10P50 Summary of contents

Page 1

... GSS 0.8 • V DSS DS DSS - 0.5 • I DS(on Temperature Coefficient DS(on) © 2002 IXYS All rights reserved IXTH/IXTT 10P50 IXTH/IXTT 11P50 Maximum Ratings -500 = 1 MΩ -500 GS ±20 ±30 10P50 -10 11P50 -11 10P50 -40 J 11P50 -44 10P50 -10 11P50 -11 30 300 -55 ... +150 150 -55 ... +150 300 1 ...

Page 2

... Pulse test, t ≤ 300 µs, duty cycle d ≤ di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. 5 ...

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