IXTX32P60P IXYS, IXTX32P60P Datasheet

MOSFET P-CH 600V 32A PLUS247

IXTX32P60P

Manufacturer Part Number
IXTX32P60P
Description
MOSFET P-CH 600V 32A PLUS247
Manufacturer
IXYS
Series
PolarP™r
Datasheet

Specifications of IXTX32P60P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
350 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
32A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
196nC @ 10V
Input Capacitance (ciss) @ Vds
11100pF @ 25V
Power - Max
890W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Vdss, Max, (v)
-600
Id(cont), Tc=25°c, (a)
-32
Rds(on), Max, Tj=25°c, (?)
0.35
Ciss, Typ, (pf)
11100
Qg, Typ, (nc)
196
Trr, Typ, (ns)
480
Pd, (w)
890
Rthjc, Max, (k/w)
0.14
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTX32P60P
Manufacturer:
ON
Quantity:
5 000
Part Number:
IXTX32P60P
Manufacturer:
IXYS
Quantity:
517
PolarP
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting force
Mounting torque
PLUS247
TO-264
V
V
V
V
V
V
Test Conditions
S
TM
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±20V, V
= V
= 0V
= -10V, I
DM
GS
, V
DSS
, I
DD
D
D
= - 250μA
D
≤ V
= - 250μA
DS
= 0.5 • I
DSS
= 0V
, T
(PLUS247)
(TO-264)
J
D25
GS
≤ 150°C
, Note 1
= 1MΩ
Preliminary Technical Information
T
J
JM
= 125°C
IXTK32P60P
IXTX32P60P
20..120/4.5..27
-55 ... +150
-55 ... +150
- 600
- 2.5
Characteristic Values
Maximum Ratings
Min.
1.13/10
- 600
- 600
- 32
- 90
- 32
±20
±30
890
150
300
260
3.5
10
10
Typ.
6
- 250 μA
±100 nA
Nm/lb.in.
- 4.5
- 50 μA
350 mΩ
Max.
N/lb.
V/ns
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
J
V
I
R
TO-264 (IXTK)
G = Gate
S = Source
Features
Applications
PLUS247 (IXTX)
D25
International standard packages
Rugged PolarP
Avalanche Rated
Low package inductance
High side switching
Push-pull amplifiers
DC Choppers
Automatic test equipment
DS(on)
DSS
G
≤ ≤ ≤ ≤ ≤
=
=
D
S
D = Drain
TAB = Drain
TM
- 600V
- 32A
process
350mΩ Ω Ω Ω Ω
DS99990(5/08)
(TAB)
(TAB)

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IXTX32P60P Summary of contents

Page 1

... GSS DSS DS DSS -10V 0.5 • I DS(on © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTK32P60P IXTX32P60P Maximum Ratings - 600 = 1MΩ - 600 GS ±20 ± 3.5 ≤ 150° 890 -55 ... +150 150 -55 ... +150 300 260 20..120/4.5..27 1.13/ Characteristic Values Min ...

Page 2

... L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXTK32P60P IXTX32P60P Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 ...

Page 3

... Fig. 2. Extended Output Characteristics @ 25º -10V -12 -15 - Volts DS Fig Normalized to I DS(on) Junction Temperature V = -10V 32A D -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature 0 -50 - Degrees Centigrade J IXTK32P60P IXTX32P60P -21 -24 -27 -30 = -16A vs -16A D 100 125 150 100 125 150 ...

Page 4

... -16A -1mA 100 120 Q - NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area R Limit DS(on) 10.0 DC, 100ms - 1 150º 25ºC C Single Pulse - 0 100 V - Volts DS IXTK32P60P IXTX32P60P 40ºC J 25ºC 125ºC -35 -40 -45 -50 140 160 180 200 25µs 100µs 1ms 10ms - 1000 ...

Page 5

... IXYS CORPORATION, All rights reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTK32P60P IXTX32P60P 0.1 1 IXYS REF: T_32P60P(B9) 6-03-08 10 ...

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