FDS6679AZ Fairchild Semiconductor, FDS6679AZ Datasheet - Page 4

• Manufacturer Part Number: FDS6679AZ
• Description: MOSFET P-CH 30V 13A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6679AZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.3 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 96nC @ 10V
• Input Capacitance (ciss) @ Vds: 3845pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0093 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 13 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6679AZTR

©2009 Fairchild Semiconductor Corporation
FDS6679AZ Rev. B2
Typical Characteristics
Figure 11.
1000
1E-3
1E-4
0.01
100
10
0.1
16
14
12
10
10
Figure 7.
8
6
4
2
0
8
6
4
2
0
1
25
0
0
Maximum Continuous Drain Current vs
5
T
Ambient Temperature
A
15
50
, AMBIENT TEMPERATURE
Figure 9. I
Gate Charge Characteristics
10
V
Q
T
DD
J
V
g
= 150
, GATE CHARGE(nC)
GS
= -10V
30
75
= -4.5V
15
o
-V
C
V
T
GS
g
J
GS
V
(V)
vs V
= 25
DD
= -10V
20
100
45
= -20V
o
C
T
GS
V
J
DD
= 25°C unless otherwise noted
25
= -15V
(
125
o
60
C
)
30
150
75
35
4
Figure 12. Forward Bias Safe Operating Area
Figure 8.
Figure 10.
0.01
10000
100
0.1
1000
10
10
20
100
1
0.01
1
10
0.1
-2
THIS AREA IS
LIMITED BY r
f = 1MHz
V
Capacitance vs Drain to Source Voltage
GS
V
= 0V
Unclamped Inductive Switching
-V
DS
0.1
10
t
DS
, DRAIN to SOURCE VOLTAGE (V)
AV
T
SINGLE PULSE
T
R
T
-1
, DRAIN TO SOURCE VOLTAGE (V)
, TIME IN AVALANCHE(ms)
J
J
A
θ
DS(on)
JA
= 125
= MAX RATED
= 25
Capability
= 125
C
o
rss
o
C
C
1
o
1
C/W
10
0
C
oss
10
www.fairchildsemi.com
T
10
J
C
= 25
1
iss
10
100 us
100 ms
10 ms
10 s
DC
o
1 s
1 ms
C
100
10
200
2
30