FDS6679AZ Fairchild Semiconductor, FDS6679AZ Datasheet - Page 5

• Manufacturer Part Number: FDS6679AZ
• Description: MOSFET P-CH 30V 13A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6679AZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.3 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 96nC @ 10V
• Input Capacitance (ciss) @ Vds: 3845pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0093 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 13 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6679AZTR

©2009 Fairchild Semiconductor Corporation
FDS6679AZ Rev. B2
Typical Characteristics
10
10
10
10
10
10
10
0.5
10
1
1
-1
-2
-3
-4
10
2
4
3
2
10
-4
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
SINGLE PULSE
R
T
A
θ
JA
0.2
0.1
0.05
0.02
0.01
= 25
Figure 14.
= 125
o
C
10
10
o
C/W
-3
-3
Figure 13.
SINGLE PULSE
R
θ
JA
Junction-to-Ambient Transient Thermal Response Curve
= 125
T
J
10
o
10
C/W
= 25°C unless otherwise noted
-2
-2
Single Pulse Maximum Power Dissipation
t, RECTANGULAR PULSE DURATION (sec)
t, PULSE WIDTH (sec)
10
10
-1
-1
5
1
1
NOTES:
DUTY FACTOR: D = t
PEAK T
10
10
J
= P
DM
x Z
θJA
P
V
DM
1
GS
/t
x R
2
10
= -10 V
10
θJA
2
2
t
1
+ T
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t
2
A
10
10
3
3