FDS6575 Fairchild Semiconductor, FDS6575 Datasheet
FDS6575
Manufacturer Part Number
FDS6575
Description
MOSFET P-CH 20V 10A SO-8
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS6575.pdf
(5 pages)
Specifications of FDS6575
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13 mOhm @ 10A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
74nC @ 4.5V
Input Capacitance (ciss) @ Vds
4951pF @ 10V
Power - Max
1.2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.013 Ohms
Forward Transconductance Gfs (max / Min)
57 S
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
10 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS6575
FDS6575TR
FDS6575TR
Available stocks
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1 200
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Part Number:
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50 000
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FDS6575-NL
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20 000
Part Number:
FDS6575_NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDS6575
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P -Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications wi t h a wide range of gate
drive voltage (2.5V – 8V).
Applications
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
R
Package Marking and Ordering Information
D
Power management
Load switch
Battery protection
D
J
DSS
GSS
, T
JA
JA
J C
Device Marking
STG
FDS6575
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D
Pin 1
D
D
SO-8
D
D
– Continuous
– Pulsed
D
FDS6575
D
Device
Parameter
S
S
S
S
S
S
G
G
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1c)
(Note 1)
Features
–10 A, –20 V. R
Low gate charge
High performance trench technology for extremely
low R
High current and power handling capability
DS(ON)
5
6
7
8
Tape width
R
DS(ON)
DS(ON)
–55 to +175
12mm
Ratings
–20
–10
–50
125
2.5
1.5
1.2
50
25
= 13 m @ V
= 17 m @ V
8
September 2001
4
3
2
1
GS
GS
= –4.5 V
= –2.5 V
2500 units
FDS6575 Rev F(W)
Quantity
Units
C/W
C/W
C/W
W
V
V
A
C
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FDS6575 Summary of contents
Page 1
... Reel Size 13’’ September 2001 = –4.5 V DS(ON –2.5 V DS(ON Ratings Units – –10 A –50 2.5 W 1.5 1.2 –55 to +175 C 50 C/W 125 C/W 25 C/W Tape width Quantity 12mm 2500 units FDS6575 Rev F(W) ...
Page 2
... Min Typ Max Units –20 V –13 mV/ C –1 100 nA –100 nA –0.4 –0.6 –1 mV =125 C – 4951 pF 884 pF 451 196 314 ns 78 125 –2.1 A –0.6 –1.2 V (Note 2) c) 125 °C/W when mounted on a minimum pad. FDS6575 Rev F(W) A ...
Page 3
... C 0.1 0.01 0.001 0.0001 1 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 1.5V GS -2.0V -2.5V -3.0V -3.5V -4. DRAIN CURRENT ( - 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 - 0.2 0.4 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6575 Rev F( 0.8 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS GS OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 125 C/W JA P(pk ( Duty Cycle 100 FDS6575 Rev F(W) 1000 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...