FDS6575 Fairchild Semiconductor, FDS6575 Datasheet - Page 3

• Manufacturer Part Number: FDS6575
• Description: MOSFET P-CH 20V 10A SO-8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6575

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 10A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 74nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4951pF @ 10V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.013 Ohms
• Forward Transconductance Gfs (max / Min): 57 S
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6575; FDS6575TR

Typical Characteristics
50
40
30
20
10
50
40
30
20
10
0
0
0
1.6
1.4
1.2
0.8
0.6
0
Figure 3. On-Resistance Variation with
1
Figure 1. On-Region Characteristics.
V
-50
Figure 5. Transfer Characteristics.
GS
V
DS
V
-3.0V
= -4.5V
GS
I
D
= -5V
= -10A
= - 4.5V
-25
-V
-V
0.5
0.5
DS
GS
0
-2.0V
, DRAIN TO SOURCE VOLTAGE (V)
T
, GATE TO SOURCE VOLTAGE (V)
J
, JUNCTION TEMPERATURE (
Temperature.
-2.5V
25
50
1
1
75
T
A
-1.5V
= -55
100
o
C
1.5
1.5
o
C)
125
125
o
25
C
150
o
C
175
2
2
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.035
0.025
0.015
0.005
0.001
0.03
0.02
0.01
0.01
0.1
with Source Current and Temperature.
2.2
1.8
1.6
1.4
1.2
0.8
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
10
1
2
1
0
0
0
Drain Current and Gate Voltage.
V
GS
V
GS
= 0V
Gate-to-Source Voltage.
= - 1.5V
-V
1
SD
10
-V
T
, BODY DIODE FORWARD VOLTAGE (V)
T
GS
0.2
A
A
, GATE TO SOURCE VOLTAGE (V)
= 125
= 25
-2.0V
-I
D
o
o
, DRAIN CURRENT (A)
C
C
20
2
-2.5V
T
25
A
= 125
o
C
0.4
-3.0V
o
C
30
3
-55
o
C
-3.5V
0.6
40
4
FDS6575 Rev F(W)
I
D
= -5A
-4.5V
50
0.8
5