FDS6575 Fairchild Semiconductor, FDS6575 Datasheet - Page 3
![MOSFET P-CH 20V 10A SO-8](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS6575
Manufacturer Part Number
FDS6575
Description
MOSFET P-CH 20V 10A SO-8
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS6575.pdf
(5 pages)
Specifications of FDS6575
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13 mOhm @ 10A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
74nC @ 4.5V
Input Capacitance (ciss) @ Vds
4951pF @ 10V
Power - Max
1.2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.013 Ohms
Forward Transconductance Gfs (max / Min)
57 S
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
10 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS6575
FDS6575TR
FDS6575TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS6575
Manufacturer:
FSC
Quantity:
1 200
Part Number:
FDS6575
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS6575-NL
Manufacturer:
RENESAS
Quantity:
2 460
Company:
Part Number:
FDS6575-NL
Manufacturer:
FAIRCHILD
Quantity:
50 000
Part Number:
FDS6575-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDS6575_NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
50
40
30
20
10
50
40
30
20
10
0
0
0
1.6
1.4
1.2
0.8
0.6
0
Figure 3. On-Resistance Variation with
1
Figure 1. On-Region Characteristics.
V
-50
Figure 5. Transfer Characteristics.
GS
V
DS
V
-3.0V
= -4.5V
GS
I
D
= -5V
= -10A
= - 4.5V
-25
-V
-V
0.5
0.5
DS
GS
0
-2.0V
, DRAIN TO SOURCE VOLTAGE (V)
T
, GATE TO SOURCE VOLTAGE (V)
J
, JUNCTION TEMPERATURE (
Temperature.
-2.5V
25
50
1
1
75
T
A
-1.5V
= -55
100
o
C
1.5
1.5
o
C)
125
125
o
25
C
150
o
C
175
2
2
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.035
0.025
0.015
0.005
0.001
0.03
0.02
0.01
0.01
0.1
with Source Current and Temperature.
2.2
1.8
1.6
1.4
1.2
0.8
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
10
1
2
1
0
0
0
Drain Current and Gate Voltage.
V
GS
V
GS
= 0V
Gate-to-Source Voltage.
= - 1.5V
-V
1
SD
10
-V
T
, BODY DIODE FORWARD VOLTAGE (V)
T
GS
0.2
A
A
, GATE TO SOURCE VOLTAGE (V)
= 125
= 25
-2.0V
-I
D
o
o
, DRAIN CURRENT (A)
C
C
20
2
-2.5V
T
25
A
= 125
o
C
0.4
-3.0V
o
C
30
3
-55
o
C
-3.5V
0.6
40
4
FDS6575 Rev F(W)
I
D
= -5A
-4.5V
50
0.8
5