FDS6575 Fairchild Semiconductor, FDS6575 Datasheet - Page 4
![MOSFET P-CH 20V 10A SO-8](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS6575
Manufacturer Part Number
FDS6575
Description
MOSFET P-CH 20V 10A SO-8
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS6575.pdf
(5 pages)
Specifications of FDS6575
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13 mOhm @ 10A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
74nC @ 4.5V
Input Capacitance (ciss) @ Vds
4951pF @ 10V
Power - Max
1.2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.013 Ohms
Forward Transconductance Gfs (max / Min)
57 S
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
10 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS6575
FDS6575TR
FDS6575TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS6575
Manufacturer:
FSC
Quantity:
1 200
Part Number:
FDS6575
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS6575-NL
Manufacturer:
RENESAS
Quantity:
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Company:
Part Number:
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Manufacturer:
FAIRCHILD
Quantity:
50 000
Part Number:
FDS6575-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDS6575_NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
0.01
5
4
3
2
1
0
100
0.1
10
Figure 9. Maximum Safe Operating Area.
0
1
0.01
Figure 7. Gate Charge Characteristics.
I
D
0.001
= -10A
R
0.01
DS(ON)
0.1
SINGLE PULSE
R
0.0001
1
V
JA
T
GS
A
10
= 125
LIMIT
= 25
= -4.5V
D = 0.5
o
o
C
0.2
C/W
0.05
-V
0.1
0.1
0.02
DS
, DRAIN-SOURCE VOLTAGE (V)
0.01
20
Q
SINGLE PULSE
g
, GATE CHARGE (nC)
0.001
30
DC
1
10s
Figure 11. Transient Thermal Response Curve.
1s
100ms
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
V
10ms
DS
40
= -5V
1ms
10
0.01
-15V
100
50
-10V
100
60
0.1
t
1
, TIME (sec)
6000
5000
4000
3000
2000
1000
50
40
30
20
10
0
0.001
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
C
RSS
1
0.01
C
OSS
-V
Power Dissipation.
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
0.1
C
t
1
10
ISS
, TIME (sec)
10
1
P(pk)
Duty Cycle, D = t
T
R
J
R
JA
- T
100
SINGLE PULSE
R
JA
15
(t) = r(t) + R
JA
A
T
t
10
= 125
1
A
= P * R
= 125°C/W
t
= 25°C
2
f = 1 MHz
V
FDS6575 Rev F(W)
GS
o
= 0 V
C/W
JA
1
JA
(t)
/ t
100
20
2
1000