IRF540NSTRLPBF International Rectifier, IRF540NSTRLPBF Datasheet - Page 4

• Manufacturer Part Number: IRF540NSTRLPBF
• Description: MOSFET N-CH 100V 33A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF540NSTRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 44 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 71nC @ 10V
• Input Capacitance (ciss) @ Vds: 1960pF @ 25V
• Power - Max: 130W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 33 A
• Power Dissipation: 3.8 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 47.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF540NSTRLPBF; IRF540NSTRLPBFTR

4
3000
2500
2000
1500
1000
500
1000
100
0.1
0
10
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
1
0.2
Drain-to-Source Voltage
T = 175 C
V
J
V
DS
SD
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
0.6
GS
iss
rss
oss
,Source-to-Drain Voltage (V)
°
=
=
=
=
0V,
C
C
C
C oss
C rss
C iss
gs
gd
ds
+ C
+ C
10
1.0
T = 25 C
f = 1MHz
gd ,
gd
J
C
°
ds
1.4
SHORTED
V
GS
= 0 V
100
1.8
1000
100
0.1
10
1
20
16
12
8
4
0
1
0
Fig 8. Maximum Safe Operating Area
I =
Fig 6. Typical Gate Charge Vs.
D
T A = 25°C
T J = 175°C
Single Pulse
16A
V DS , Drain-toSource Voltage (V)
Gate-to-Source Voltage
Q , Total Gate Charge (nC)
G
20
10
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V
V
V
40
DS
DS
DS
= 80V
= 50V
= 20V
FOR TEST CIRCUIT
SEE FIGURE
100
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100µsec
60
1msec
10msec
13
1000
80