FDG332PZ Fairchild Semiconductor, FDG332PZ Datasheet - Page 4
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FDG332PZ
Manufacturer Part Number
FDG332PZ
Description
MOSFET P-CH 20V 2.6A SC70-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDG332PZ.pdf
(6 pages)
Specifications of FDG332PZ
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
95 mOhm @ 2.6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.6A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
10.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
560pF @ 10V
Power - Max
480mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.095 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.6 A
Power Dissipation
750 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDG332PZTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDG332PZ
Manufacturer:
Fairchild Semiconductor
Quantity:
111 136
Company:
Part Number:
FDG332PZ
Manufacturer:
VISHAY
Quantity:
5 709
Part Number:
FDG332PZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2008 Fairchild Semiconductor Corporation
FDG332PZ Rev.B1
Typical Characteristics
0.01
4.5
3.0
1.5
0.0
0.1
10
1
Figure 7.
0.1
0
100
0.1
10
THIS AREA IS
LIMITED BY r
10
1
I
SINGLE PULSE
T
R
T
D
J
A
-3
= -2.6A
JA
= MAX RATED
Figure 9.
= 25
= 260
-V
o
V
C
DS
GS
Gate Charge Characteristics
o
2
C/W
, DRAIN to SOURCE VOLTAGE (V)
DS(on)
= -4.5V
Operating Area
V
Q
DD
g
, GATE CHARGE (nC)
Forward Bias Safe
= -10V
1
V
10
DD
-2
= -5V
4
Figure 11.
T
J
V
= 25°C unless otherwise noted
DD
= -15V
10
6
10
-1
100us
1ms
10ms
100ms
10s
1s
DC
Transient Thermal Response Curve
t, PULSE WIDTH (s)
50
8
4
10
0
Figure 10.
1000
10
10
10
10
10
10
10
10
10
10
100
30
-1
-2
-3
-4
0.1
5
4
3
2
1
0
0
Figure 8.
V
f = 1MHz
V
GS
GS
= 0V
10
= 0V
Gate Leakage Current vs Gate to
-V
-V
1
DS
to Source Voltage
GS ,
5
Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain
GATE TO SOURCE VOLTAGE (V)
T
J
= 150
1
o
C
10
10
2
SINGLE PULSE
R
T
A
JA
= 25
T
= 260
C
C
J
C
o
= 25
iss
oss
rss
C
15
o
www.fairchildsemi.com
C/W
o
C
10
10
3
20
20