FDFMA3N109 Fairchild Semiconductor, FDFMA3N109 Datasheet
FDFMA3N109
Manufacturer Part Number
FDFMA3N109
Description
MOSFET N-CH 30V 2.9A MICRO2X2
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDFMA3N109.pdf
(7 pages)
Specifications of FDFMA3N109
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
123 mOhm @ 2.9A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.9A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
3nC @ 4.5V
Input Capacitance (ciss) @ Vds
220pF @ 15V
Power - Max
650mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDFMA3N109TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDFMA3N109
Manufacturer:
ETONTECM
Quantity:
554
Part Number:
FDFMA3N109
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDFMA3N109
Integrated N-Channel PowerTrench
General Description
This device is designed specifically as a single package
solution for a boost topology in cellular handset and
other ultra-portable applications. It features a MOSFET
with low input capacitance, total gate charge and on-
state resistance, and an independently connected
schottky diode with low forward voltage and reverse
leakage current to maximize boost efficiency.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
switching and linear mode applications.
©2008 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
V
I
Thermal Characteristics
R
R
R
R
Package Marking and Ordering Information
D
O
J
DS
GS
D
RRM
θJA
θJA
θJA
θJA
, T
Device Marking
STG
109
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (T
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Temperature
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
MicroFET 2x2
– Continuous (T
– Pulsed
FDFMA3N109
K
PIN 1
K
Device
A
G
NC
Parameter
S
D
C
C
D
= 25°C, V
= 25°C, V
T
A
=25
o
C unless otherwise noted
Reel Size
®
GS
GS
7’’
MOSFET and Schottky Diode
= 4.5V)
= 2.5V)
Features
MOSFET:
• 2.9 A, 30 V R
Schottky:
• V
• Low profile – 0.8 mm maximum – in the new package
•
• RoHS Compliant
MicroFET 2x2 mm
HBM ESD protection level = 1.8kV typical (Note 3 )
F
< 0.46 V @ 500mA
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
NC
D
A
1
2
3
R
R
Tape width
DS(ON)
DS(ON)
DS(ON)
8mm
= 123 mΩ @ V
= 163 mΩ @ V
= 140 mΩ @ V
–55 to +150
Ratings
0.65
±12
193
101
228
2.9
2.7
1.5
30
10
28
83
1
6
5
4
GS
GS
GS
April 2008
= 4.5 V
= 2.5 V
= 3.0 V
G
K
S
FDFMA3N109 Rev B2
3000 units
Quantity
Units
°C/W
°C
W
V
V
A
V
A
tm
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FDFMA3N109 Summary of contents
Page 1
... Reel Size 7’’ April 2008 = 123 mΩ 4.5 V DS(ON 140 mΩ 3.0 V DS(ON 163 mΩ 2 DS(ON Ratings Units ±12 2.9 2 1.5 W 0.65 –55 to +150 ° 193 °C/W 101 228 Tape width Quantity 8mm 3000 units FDFMA3N109 Rev B2 tm ...
Page 2
... V –3 mV/°C 75 123 84 140 92 163 mΩ 95 166 138 203 150 268 190 220 4.6 Ω 2.4 3.0 nC 0.35 nC 0.75 nC 2.9 A 0.9 1.2 V 0.8 1 100 µA 0.07 4.7 mA 0.50 0.57 V 0.49 0.60 0.40 0.46 V 0.36 0.43 FDFMA3N109 Rev B2 ...
Page 3
... PCB o b) 193 C/W when mounted on a minimum pad copper is guaranteed by design while R is θJC θ c)101 C/W b) 228 C/W when when mounted on mounted 1in pad a minimum pad of copper 2 oz copper FDFMA3N109 Rev B2 ...
Page 4
... A 0.01 0.001 0.0001 2 0.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 2.0V GS 2.7V 2.9V 3.5V 4.0V 4. DRAIN CURRENT ( 1.45A 125 GATE TO SOURCE VOLTAGE ( -55 C 0.4 0.6 0.8 1 1.2 1 BODY DIODE FORWARD VOLTAGE (V) SD FDFMA3N109 Rev 1.6 ...
Page 5
... Figure 10. Schottky Diode Reverse Current. 0.01 0 TIME (sec 1MHz iss C oss DRAIN TO SOURCE VOLTAGE ( 125 100 REVERSE VOLTAGE ( ( θ JA θ =193°C/W θ JA P(pk (t) θ Duty Cycle 100 1000 FDFMA3N109 Rev ...
Page 6
... Dimensional Outline and Pad Layout rev3 FDFMA3N109 Rev B2 ...
Page 7
... Fairchild Semiconductor. The datasheet is for reference information only. The Power Franchise ® tm TinyBoost™ TinyBuck™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ ® Definition FDFMA3N109 Rev B2 ® Rev. I34 ...