FQT4N25TF Fairchild Semiconductor, FQT4N25TF Datasheet - Page 4

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FQT4N25TF

Manufacturer Part Number
FQT4N25TF
Description
MOSFET N-CH 250V 0.83A SOT-223
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQT4N25TF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.75 Ohm @ 415mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
830mA
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
5.6nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.75 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
1.28 S
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
0.83 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2001 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
10
1.2
1.1
1.0
0.9
0.8
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
-2
-3
1
0
10
Figure 7. Breakdown Voltage Variation
-1
-50
10
T
vs. Temperature
V
0
J
, Junction Temperature [
DS
0
, Drain-Source Voltage [V]
※ Notes :
1 0
1 0
1 0
Operation in This Area
is Limited by R
1. T
2. T
3. Single Pulse
- 1
C
J
1
0
1 0
= 150
= 25
- 5
0 . 0 2
o
0 . 0 5
0 . 0 1
C
o
D = 0 .5
C
0 . 2
0 . 1
50
DS(on)
10
1
Figure 11. Transient Thermal Response Curve
1 0
DC
- 4
100
100 ms
(Continued)
o
C]
※ Notes :
10 ms
1. V
2. I
s in g le p u ls e
D
G S
= 250 μ A
1 0
t
1 ms
10
1
= 0 V
150
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
2
- 3
100 s
200
1 0
- 2
1 0
- 1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
0.8
0.6
0.4
0.2
0.0
-100
25
1 0
0
Figure 8. On-Resistance Variation
※ N o t e s :
Figure 10. Maximum Drain Current
1 . Z
2 . D u ty F a c to r , D = t
3 . T
P
θ J C
J M
-50
DM
- T
50
( t ) = 5 0 ℃ /W M a x .
1 0
vs. Case Temperature
C
1
= P
T
vs. Temperature
t
J
T
D M
1
, Junction Temperature [
C
t
0
, Case Temperature [ ℃ ]
2
* Z
1
75
/ t
θ J C
1 0
2
( t )
2
50
100
1 0
3
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 0.415 A
= 10 V
150
Rev. A, May 2001
200

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