FQT4N25TF Fairchild Semiconductor, FQT4N25TF Datasheet - Page 7

• Manufacturer Part Number: FQT4N25TF
• Description: MOSFET N-CH 250V 0.83A SOT-223
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQT4N25TF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 415mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 830mA
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 1.28 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.83 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Package Dimensions
(0.95)
2.30 TYP
4.60
6.50
3.00
0.25
0.20
0.10
SOT-223
0.70
(0.95)
0.10
MAX1.80
0.25
+0.10
–0.05
0.06
+0.04
–0.02
Rev. A, May 2001