IRFU214BTU_FP001 Fairchild Semiconductor, IRFU214BTU_FP001 Datasheet

MOSFET N-CH 250V 2.2A IPAK

IRFU214BTU_FP001

Manufacturer Part Number
IRFU214BTU_FP001
Description
MOSFET N-CH 250V 2.2A IPAK
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of IRFU214BTU_FP001

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 1.1A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.2A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
10.5nC @ 10V
Input Capacitance (ciss) @ Vds
275pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2001 Fairchild Semiconductor Corporation
IRFR214B / IRFU214B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters and
switch mode power supplies.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
stg
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
IRFR Series
D-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
= 25°C) *
Parameter
= 25°C)
Parameter
G
T
D
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 2.2A, 250V, R
• Low gate charge ( typical 8.1 nC)
• Low Crss ( typical 7.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
IRFU Series
I-PAK
IRFR214B / IRFU214B
DS(on)
Typ
--
--
--
-55 to +150
= 2.0
300
250
2.2
1.4
8.5
2.2
2.5
5.5
2.5
0.2
45
25
30
G
! ! ! !
! ! ! !
@V
Max
5.08
GS
110
50
◀ ◀ ◀ ◀
◀ ◀ ◀ ◀
= 10 V
! ! ! !
! ! ! !
! ! ! !
! ! ! !
November 2001
D
S
● ●
● ●
● ●
● ●
● ●
● ●
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
Rev. B, November 2001
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A

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IRFU214BTU_FP001 Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient * JA R Thermal Resistance, Junction-to-Ambient JA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Fairchild Semiconductor Corporation Features • 2.2A, 250V, R • Low gate charge ( typical 8.1 nC) • Low Crss ( typical 7.5 pF) • Fast switching • 100% avalanche tested • ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 14.9mH 2.2A 50V ≤ 2.8A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 250 ...

Page 3

... Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 500 400 C iss 300 C oss 200 C rss 100 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation 0 10 ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics = 10V 0 10 ※ Note : T = 25℃ ...

Page 4

... 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 250 μ 0.5 D 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 2.5 2.0 100 1 1.0 0.5 0.0 ...

Page 5

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Mechanical Dimensions ©2001 Fairchild Semiconductor Corporation D - PAK Dimensions in Millimeters Rev. B, November 2001 ...

Page 8

... Mechanical Dimensions ©2001 Fairchild Semiconductor Corporation I - PAK Dimensions in Millimeters Rev. B, November 2001 ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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