NDT2955 Fairchild Semiconductor, NDT2955 Datasheet

NDT2955

Manufacturer Part Number

NDT2955

Description

MOSFET P-CH 60V 2.5A SOT-223-4

Manufacturer

Fairchild Semiconductor

Type

Power MOSFETr

Datasheet

1.NDT2955.pdf (5 pages)

Specifications of NDT2955

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

300 mOhm @ 2.5A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

2.5A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

15nC @ 10V

Input Capacitance (ciss) @ Vds

601pF @ 30V

Power - Max

1.1W

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.3Ohm

Drain-source On-volt

60V

Gate-source Voltage (max)

±20V

Drain Current (max)

2.5A

Power Dissipation

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

3 +Tab

Package Type

SOT-223

Configuration

Single Dual Drain

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.3 Ohm @ 10 V

Forward Transconductance Gfs (max / Min)

5.5 S

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

2.5 A

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Continuous Drain Current Id

2.5A

Drain Source Voltage Vds

60V

On Resistance Rds(on)

300mohm

Rds(on) Test Voltage Vgs

-10V

Threshold Voltage Vgs Typ

2.6V

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NDT2955TR

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Current page: 1 of 5
Download datasheet (128Kb)

NDT2955

P-Channel Enhancement Mode Field Effect Transistor

General Description

This 60V P-Channel MOSFET is produced

Fairchild Semiconductor’s high voltage Trench process.

It has been

plications.

Applications

2002 Fairchild Semiconductor Corporation

Absolute Maximum Ratings

Symbol

Thermal Characteristics

Package Marking and Ordering Information

DSS

GSS

, T

DC/DC converter

Power management

Device Marking

STG

SOT-223

NDT2955

optimized

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Maximum Power Dissipation

Operating and Storage Junction Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

for

– Continuous

– Pulsed

power management

NDT2955

Device

Parameter

=25

using

C unless otherwise noted

Reel Size

13’’

(Note 1a)

(Note 1b)

(Note 1a)

(Note 1c)

(Note 1)

Features

–2.5 A, –60 V. R

High density cell design for extremely low R

High power and current handling capability in a widely

used surface mount package.

SOT-223

(J23Z)

Tape width

DS(ON)

–55 to +150

12mm

Ratings

–2.5

–60

–15

= 300m

= 500m

3.0

1.3

1.1

@ V

April 2002

= –10 V

= –4.5 V

2500 units

Quantity

NDT2955 Rev. C

DS(ON)

Units

C/W

Related parts for NDT2955

NDT2955 Summary of contents

Page 1

... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Reel Size 13’’ April 2002 = 300m @ V = –10 V DS(ON 500m @ V = –4.5 V DS(ON) GS DS(ON Ratings Units – –2.5 A –15 3.0 W 1.3 1.1 –55 to +150 C 42 C/W 12 Tape width Quantity 12mm 2500 units NDT2955 Rev. C ...

Page 2

... Min Typ Max Units 174 mJ –60 V –60 mV/ C –10 A 100 nA –100 nA –2 –2.6 –4 V 5.7 mV 300 m 163 500 153 513 –12 A 5.5 S 601 2.4 nC 2.7 nC –2.5 A –0.8 –1 110°C/W when mounted on a minimum pad. NDT2955 Rev. C ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. =-4.5V -5.0V -6.0V -7.0V -8.0V -10V DRAIN CURRENT ( -1. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD NDT2955 Rev 1.2 ...

Page 4

... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 110°C 25°C A 0.01 0 100 t , TIME (sec) 1 Power Dissipation. R ( 110 C/W JA P(pk ( Duty Cycle 100 NDT2955 Rev 1000 1000 ...

Page 5

CROSSVOLT â â â â Rev. H5 ...

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