FQD7P06TM Fairchild Semiconductor, FQD7P06TM Datasheet - Page 7
![MOSFET P-CH 60V 5.4A DPAK](/photos/5/38/53880/261-dpak_sml.jpg)
FQD7P06TM
Manufacturer Part Number
FQD7P06TM
Description
MOSFET P-CH 60V 5.4A DPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Specifications of FQD7P06TM
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
451 mOhm @ 2.7A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
5.4A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.2nC @ 10V
Input Capacitance (ciss) @ Vds
295pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.451 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
3.8 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
5.4 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Mechanical Dimensions
D - PAK
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A2. May 2001