FDD6N25TM Fairchild Semiconductor, FDD6N25TM Datasheet

MOSFET N-CH 250V 4.4A DPAK

FDD6N25TM

Manufacturer Part Number
FDD6N25TM
Description
MOSFET N-CH 250V 4.4A DPAK
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDD6N25TM

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.1 Ohm @ 2.2A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
4.4A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 10V
Input Capacitance (ciss) @ Vds
250pF @ 25V
Power - Max
50W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.9 Ohms
Forward Transconductance Gfs (max / Min)
5.5 S
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
4.4 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Fall Time
12 ns
Rise Time
25 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD6N25TMTR
©2007 Fairchild Semiconductor Corporation
FDD6N25 / FDU6N25 Rev. A
FDD6N25 / FDU6N25
250V N-Channel MOSFET
Features
• 4.4A, 250V, R
• Low gate charge ( typical 4.5 nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θJA
T
STG
rss
( typical 5 pF)
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
DS(on)
G
= 1.1Ω @V
S
FDD Series
D-PAK
GS
D
= 10 V
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
Parameter
C
= 25°C)
G
D
C
C
S
= 25°C)
= 100°C)
1
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDU Series
I-PAK
FDD6N25 / FDU6N25
Typ
--
--
-55 to +150
250
±30
300
4.4
2.6
4.4
4.5
0.4
18
45
50
5
G
Max
110
2.5
UniFET
February 2007
S
D
www.fairchildsemi.com
Unit
W/°C
Unit
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

Related parts for FDD6N25TM

FDD6N25TM Summary of contents

Page 1

... Symbol R Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FDD6N25 / FDU6N25 Rev. A Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... Package Marking and Ordering Information Device Marking Device FDD6N25 FDD6N25TM FDD6N25 FDD6N25TF FDU6N25 FDU6N25TU Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS ∆T / Coefficient J I Zero Gate Voltage Drain Current DSS I Gate-Body Leakage Current, Forward ...

Page 3

Typical Performance Characteristics Figure 1. On-Region Characteristics V GS Top : 15.0 V 10 7.0 V 6.5 V 6.0 V Bottom : 5 Drain-Source ...

Page 4

Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9. Maximum Safe Operating Area Operation in This Area is Limited ...

Page 5

Unclamped Inductive Switching Test Circuit & Waveforms FDD6N25 / FDU6N25 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

FDD6N25 / FDU6N25 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

Mechanical Dimensions FDD6N25 / FDU6N25 Rev. A D-PAK 7 www.fairchildsemi.com ...

Page 8

Mechanical Dimensions FDD6N25 / FDU6N25 Rev. A I-PAK 8 www.fairchildsemi.com ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ ...

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