FDD6N25TM Fairchild Semiconductor, FDD6N25TM Datasheet - Page 3

• Manufacturer Part Number: FDD6N25TM
• Description: MOSFET N-CH 250V 4.4A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDD6N25TM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.1 Ohm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 25V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohms
• Forward Transconductance Gfs (max / Min): 5.5 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 12 ns
• Rise Time: 25 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD6N25TMTR

FDD6N25 / FDU6N25 Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
400
350
300
250
200
150
100
10
10
10
6
5
4
3
2
1
50
0
0
-1
1
0
10
10
Drain Current and Gate Voltage
-1
-1
Top :
Bottom : 5.5 V
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
2
C
GS
C
oss
iss
C
rss
V
V
DS
DS
, Drain-Source Voltage [V]
I
, Drain-Source Voltage [V]
D
, Drain Current [A]
10
10
4
0
0
V
GS
6
= 10V
C
C
C
iss
oss
rss
= C
= C
= C
gs
10
ds
gd
* Note : T
+ C
10
+ C
1
* Notes :
1. 250
2. T
1
gd
8
gd
(C
V
C
* Note :
ds
GS
J
= 25
1. V
2. f = 1 MHz
µ
= 25
= shorted)
s Pulse Test
= 20V
o
GS
o
C
C
= 0 V
10
3
10
10
10
10
12
10
1
0
1
0
0.2
8
6
4
2
0
2
0
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
0.4
Variation vs. Source Current
25
4
150
0.6
1
o
C
150
o
C
V
V
o
GS
SD
Q
C
and Temperatue
0.8
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
G
, Total Gate Charge [nC]
25
6
o
C
V
V
2
V
DS
1.0
DS
DS
= 200V
= 125V
= 50V
-55
1.2
o
C
8
3
1.4
* Notes :
* Notes :
1. V
2. 250
* Note : I
1. V
2. 250
1.6
10
GS
DS
4
µ
= 0V
µ
= 40V
s Pulse Test
s Pulse Test
D
www.fairchildsemi.com
= 6A
1.8
2.0
12
5