FQPF4N25 Fairchild Semiconductor, FQPF4N25 Datasheet - Page 67
FQPF4N25
Manufacturer Part Number
FQPF4N25
Description
MOSFET N-CH 250V 2.8A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQPF4N25.pdf
(214 pages)
Specifications of FQPF4N25
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.75 Ohm @ 1.4A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.8A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
5.6nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
32W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.75 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.8 A
Power Dissipation
32 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
22 ns
Minimum Operating Temperature
- 55 C
Rise Time
45 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQPF4N25
Manufacturer:
FAIRCHILD
Quantity:
12 500
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TO-220F (Continued)
IRFS830B
FQPF5N50
IRFS820B
FQPF4N50
FQPF2N50
SSS1N50B
FQPF1N50
FCPF11N60
FQPF12N60C
FQPF12N60
FQPF10N60C
SSS10N60B
FQPF7N60
FQPF8N60C
SSS7N60B
FQPF6N60
FQPF5N60
FQPF6N60C
FQPF4N60
FQPF5N60C
SSS4N60B
FQPF3N60
FQPF2N60
FQPF2N60C
SSS2N60B
FQPF1N60
FQPF1N60C
SSS1N60B
FQPF7N65C
FQPF6N70
SSS6N70A
FQPF2N70
FQPF8N80C
FQPF7N80C
FQPF6N80
Products
Min. (V)
BV
500
500
500
500
500
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
650
700
700
700
800
800
800
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
10V
0.38
0.65
0.73
11.5
11.5
1.55
1.95
1.5
1.8
2.6
2.7
5.3
5.5
0.7
0.8
1.2
1.2
1.5
2.2
2.5
2.5
3.6
4.7
4.7
1.4
1.5
1.8
6.3
1.9
12
9
1
2
2
5
R
DS(ON)
4.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-62
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
12.5
GS
8.3
8.5
4.8
5.9
8.1
27
13
14
10
40
48
42
44
54
29
28
38
20
16
16
15
15
22
10
28
30
51
35
27
31
6
4
9
5
=5V
I
D
4.5
2.5
2.3
1.3
1.2
0.9
5.8
9.5
4.3
7.5
3.6
2.8
5.5
2.6
4.5
1.6
0.9
1.1
3.5
6.6
3.3
11
12
3
9
7
4
2
2
2
1
7
4
2
8
(A)
MOSFETs
P
D
38
39
33
35
20
23
16
36
51
55
50
50
48
48
48
44
40
40
36
33
33
34
28
23
23
21
17
17
52
48
40
28
59
56
51
(W)
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