FQD5P20TM Fairchild Semiconductor, FQD5P20TM Datasheet - Page 8
![MOSFET P-CH 200V 3.7A DPAK](/photos/5/38/53880/261-dpak_sml.jpg)
FQD5P20TM
Manufacturer Part Number
FQD5P20TM
Description
MOSFET P-CH 200V 3.7A DPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Specifications of FQD5P20TM
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.4 Ohm @ 1.85A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
3.7A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
430pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
1.4 Ohms
Forward Transconductance Gfs (max / Min)
2.2 S
Drain-source Breakdown Voltage
- 200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
- 3.7 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Mechanical Dimensions
I - PAK
Dimensions in Millimeters
©2008 Fairchild Semiconductor Internationa
Rev. A1, October 2008