FDD4243 Fairchild Semiconductor, FDD4243 Datasheet - Page 4

• Manufacturer Part Number: FDD4243
• Description: MOSFET P-CH 40V 6.7A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD4243

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 44 mOhm @ 6.7A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 1550pF @ 20V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.044 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 16 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.7 A
• Power Dissipation: 42000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD4243TR

FDD4243 Rev.C1
Typical Characteristics
100
0.1
10
10
10
Figure 7.
1
8
6
4
2
0
8
6
4
2
1
0.01
0.5
0
Figure 9.
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
Figure 11. Forward Bias Safe
I
D
-V
= -6.7A
1
DS
4
Switching Capability
, DRAIN to SOURCE VOLTAGE (V)
Gate Charge Characteristics
t
Operating Area
AV
DS(on)
Q
Unclamped Inductive
0.1
, TIME IN AVALANCHE(ms)
g
, GATE CHARGE(nC)
8
V
DD
T
J
SINGLE PULSE
T J = MAX RATED
T C = 25
= -10V
= 125
12
V
10
DD
T
o
O
1
C
J
C
= -30V
= 25°C unless otherwise noted
16
T
J
V
= 25
DD
= -20V
o
C
20
10
100us
100ms
10ms
1ms
100
30
24
4
10000
1000
1000
3000
100
100
25
20
15
10
Figure 10.
25
30
50
5
0
0.1
10
Figure 12.
-5
Figure 8.
R
Current vs Case Temperature
f = 1MHz
V
SINGLE PULSE
θ
GS
JC
-V
10
= 3.0
50
= 0V
Limited by Package
DS
V
-4
GS
Power Dissipation
Maximum Continuous Drain
T
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
o
C
C/W
, CASE TEMPERATURE
= -10V
Single Pulse Maximum
Capacitance vs Drain
t, PULSE WIDTH (s)
10
75
-3
1
V
10
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
GS
I = I
-2
100
V
= -10V
GS
25
= -4.5V
10
o
C DERATE PEAK
-1
C
150 T
--------------------- -
C
C
rss
(
oss
iss
125
125
o
–
C
www.fairchildsemi.com
10
)
C
10
T
C
0
= 25
o
150
C
10
30
1