ZVN4206AVSTZ Diodes Zetex, ZVN4206AVSTZ Datasheet

MOSFET N-CHAN 60V TO92-3

ZVN4206AVSTZ

Manufacturer Part Number
ZVN4206AVSTZ
Description
MOSFET N-CHAN 60V TO92-3
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZVN4206AVSTZ

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
600mA
Vgs(th) (max) @ Id
3V @ 1mA
Input Capacitance (ciss) @ Vds
100pF @ 25V
Power - Max
700mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - APRIL 1998
FEATURES
*
*
*
*
*
APPLICATIONS
*
*
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
Continuous Body Diode Current at T
=25°C
Avalanche Current – Repetitive
Avalanche Energy – Repetitive
Operating and Storage Temperature Range
PARAMETER
Drain-Source Breakdown Voltage BV
Gate-Source Threshold Voltage V
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance(1)(2) g
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance (2) C
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
60 Volt V
R
Repetitive avalanche rating
No transient protection required
Characterised for 5V logic drive
Automotive relay drivers
Stepper motor driver
DS(on)
= 1
DS
amb
=25°C
amb
SYMBOL MIN.
I
I
I
R
C
C
t
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
=25°C
GS(th)
DS(on)
iss
oss
rss
DSS
amb
60
1.3
3
300
amb
SYMBOL
V
I
I
V
P
I
I
E
T
D
DM
SD
AR
tot
AR
j
DS
GS
:T
= 25°C unless otherwise stated).
MAX. UNIT CONDITIONS.
3
100
10
100
1
1.5
100
60
20
8
12
12
15
stg
V
V
nA
A
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
I
V
V
V
V
V
V
V
V
V
D
D
GS
DS
DS
DS
GS
GS
DS
DS
DD
=1mA, V
=1mA, V
-55 to +150
= 20V, V
=60V, V
=48V, V
=25V, V
=10V,I
=5V,I
=25V,I
=25V, V
VALUE
ZVN4206AV
25V, I
600
700
600
600
60
15
8
20
D
TO92 Compatible
=.0.5A
D
D
GS
DS
=1.5A
=1.5A
GS
GS
GS
GS
D
D
G
=0V
= V
=1.5A,V
DS
=0
=0V, T=125°C
=10V
=0V, f=1MHz
S
E-Line
=0V
GS
GEN
UNIT
mW
mA
mA
mA
mJ
°C
V
A
V
=10V
(2)

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ZVN4206AVSTZ Summary of contents

Page 1

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - APRIL 1998 FEATURES * 60 Volt DS(on) * Repetitive avalanche rating * No transient protection required * Characterised for 5V logic drive APPLICATIONS * Automotive ...

Page 2

TYPICAL CHARACTERISTICS GS= GS= 20V 20V 16V 16V 8 8 14V 14V 12V 12V Drain Source Voltage (Volts) - ...

Page 3

ZVN4206AV TYPICAL CHARACTERISTICS 1000 900 800 700 600 V 10V DS= 500 400 300 200 100 Drain Current (Amps) D Transconductance v drain current 200 160 120 ...

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