FDMA510PZ Fairchild Semiconductor, FDMA510PZ Datasheet - Page 2

• Manufacturer Part Number: FDMA510PZ
• Description: MOSFET P-CH 20V 7.8A 6-MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDMA510PZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 7.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1480pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.03 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 7.8 A
• Power Dissipation: 2400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.03Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: MicroFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMA510PZTR

©2009 Fairchild Semiconductor Corporation
FDMA510PZ Rev.B2
Dynamic Characteristics
Electrical Characteristics
Off Characteristics
On Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. R
2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
BV
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
rr
DS(on)
FS
the user's board design.
BV
GS(th)
SD
iss
oss
rss
g
gs
gd
rr
V
Symbol
DSS
T
T
JA
GS(th)
DSS
J
J
is determined with the device mounted on a 1in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Maximum Continuous Drain-Source Diode Forward Current
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
a. 52°C/W when mounted on
a 1 in
2
pad of 2 oz copper.
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 25°C unless otherwise noted
V
I
V
V
V
V
V
V
V
V
V
I
V
f = 1MHz
I
I
V
V
D
V
V
F
D
D
GS
GS
GS
GS
GS
GS
DD
GS
DD
GS
DS
DS
GS
DD
GS
= –7.8A, di/dt = 100A/ s
= –250 A, referenced to 25°C
= –250 A, V
= –250 A, referenced to 25°C
= 0V, I
= V
= –4.5V, I
= –2.5V, I
= –1.8V, I
= –1.5V, I
= –4.5V, I
= –5V, I
= –10V, V
= –10V, I
= –4.5V, R
= –16V, V
= ±8V, V
= –5V, I
= –4.5V
DS
2
Test Conditions
, I
S
D
D
= –2A
D
DS
D
D
D
D
D
D
= –7.8A
= –250 A
GS
GS
= –7.8A
GS
GEN
= –7.8A
= –7.8A
= –6.6A
= –5.5A
= –2.0A
= –7.8A ,T
= 0V
= 0V
= 0V,
= 0V
= 6
J
= 125°C
b. 145°C/W when mounted on a
minimum pad of 2 oz copper.
JC
is guaranteed by design while R
–0.4
Min
–20
–0.8
Typ
1110
–13
–0.7
125
205
185
2.1
4.2
44
64
19
66
27
34
46
60
36
26
7
9
3
Max
1480
–1.2
±10
–1.5
200
103
106
275
280
–1
CA
www.fairchildsemi.com
14
18
27
–2
71
30
37
50
90
40
is determined by
mV/°C
mV/°C
Units
m
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
V
A
A