FDMA510PZ Fairchild Semiconductor, FDMA510PZ Datasheet - Page 3

• Manufacturer Part Number: FDMA510PZ
• Description: MOSFET P-CH 20V 7.8A 6-MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDMA510PZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 7.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1480pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.03 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 7.8 A
• Power Dissipation: 2400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.03Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: MicroFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMA510PZTR

©2009 Fairchild Semiconductor Corporation
FDMA510PZ Rev.B2
Typical Characteristics
24
20
16
12
1.6
1.4
1.2
1.0
0.8
0.6
24
20
16
12
Figure 3. Normalized On- Resistance
8
4
0
Figure 1.
8
4
0
0.0
-75
0
Figure 5. Transfer Characteristics
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
V
V
V
I
DD
D
GS
GS
-50
vs Junction Temperature
= -7.8A
= -5V
= -4.5V
= -4.5V
T
0.5
-V
T
-V
J
-25
On-Region Characteristics
J
DS
= 25
GS
,
1
JUNCTION TEMPERATURE (
,
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
T
o
J
C
= -55
0
1.0
o
25
C
V
V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
GS
GS
2
= -2.5V
= -2V
T
50
T
J
= 150
1.5
J
= 25°C unless otherwise noted
75
o
C
3
V
o
100 125 150
V
C )
GS
2.0
GS
= -1.8V
= -1.5V
2.5
4
3
1E-3
0.01
0.1
2.5
2.0
1.5
1.0
0.5
10
10
200
150
100
1
50
0.0
Figure 2.
Figure 4.
0
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
1.0
Figure 6.
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
V
GS
T
J
= 0V
-V
= 150
0.2
1.5
SD
4
-V
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
GS
On-Resistance vs Gate to
o
V
C
-I
Source Voltage
,
GS
Source to Drain Diode
D
GATE TO SOURCE VOLTAGE (V)
,
2.0
= -1.5V
DRAIN CURRENT(A)
0.4
8
V
GS
2.5
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
= -2.5V
T
0.6
J
12
T
= -55
J
= 25
3.0
V
o
C
GS
T
o
T
C
J
0.8
16
J
= 125
V
= -2V
= 25
I
GS
D
3.5
= -7.8A
= -1.8V
o
o
C
C
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V
1.0
GS
20
4.0
= -4.5V
1.2
4.5
24