FDMA510PZ Fairchild Semiconductor, FDMA510PZ Datasheet - Page 5

• Manufacturer Part Number: FDMA510PZ
• Description: MOSFET P-CH 20V 7.8A 6-MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDMA510PZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 7.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1480pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.03 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 7.8 A
• Power Dissipation: 2400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.03Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: MicroFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMA510PZTR

©2009 Fairchild Semiconductor Corporation
FDMA510PZ Rev.B2
Typical Characteristics
1E-3
0.01
0.1
2
1
10
-4
D = 0.5
DUTY CYCLE-DESCENDING ORDER
0.2
0.1
0.05
0.02
0.01
10
-3
SINGLE PULSE
R
JA
= 145
T
Figure 12. Transient Thermal Response Curve
J
= 25°C unless otherwise noted
o
C/W
10
-2
t, RECTANGULAR PULSE DURATION (s)
10
-1
5
10
0
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
= P
1
DM
x Z
P
JA
DM
1
/t
x R
2
JA
10
t
1
+ T
2
t
2
A
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10
3