FQPF11P06 Fairchild Semiconductor, FQPF11P06 Datasheet - Page 3
![MOSFET P-CH 60V 8.6A TO-220F](/photos/5/31/53149/mfg_to-220f_desc_sml.jpg)
FQPF11P06
Manufacturer Part Number
FQPF11P06
Description
MOSFET P-CH 60V 8.6A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQPF11P06.pdf
(8 pages)
Specifications of FQPF11P06
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
175 mOhm @ 4.3A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
8.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
550pF @ 25V
Power - Max
30W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.175 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
4.75 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
8.6 A
Power Dissipation
30000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQPF11P06
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FQPF11P06
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2004 Fairchild Semiconductor Corporation
Typical Characteristics
1200
1000
10
800
600
400
200
10
10
0.8
0.6
0.4
0.2
0.0
-1
1
0
0
10
10
0
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs.
-1
Top :
Bottom : - 4.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
- 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
V
GS
10
-V
-V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
-I
D
10
, Drain Current [A]
0
10
20
C
C
C
0
oss
iss
rss
V
V
GS
GS
= - 20V
= - 10V
30
C
C
C
iss
oss
rss
※
= C
= C
= C
10
1. 250µ s Pulse Test
2. T
※
Notes :
gs
gd
ds
1
Note : T
C
+ C
+ C
= 25 ℃
40
10
gd
gd
1
(C
※
J
ds
1. V
2. f = 1 MHz
= 25 ℃
Notes :
= shorted)
GS
= 0 V
50
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.0
0
2
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
25 ℃
Figure 2. Transfer Characteristics
0.2
175 ℃
2
Variation vs. Source Current
175 ℃
0.4
4
-V
-V
4
0.6
Q
SD
and Temperature
GS
-55 ℃
G
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
25 ℃
V
DS
0.8
V
= -48V
DS
6
= -30V
1.0
6
8
1.2
1.4
※
10
※
1. V
2. 250µ s Pulse Test
1. V
2. 250µ s Pulse Test
Notes :
※
Notes :
8
DS
GS
Note : I
1.6
= -30V
= 0V
D
12
= -11.4 A
1.8
Rev. B4, March 2004
2.0
10
14