FDG330P Fairchild Semiconductor, FDG330P Datasheet - Page 2
![MOSFET P-CH 12V 2A SC70-6](/photos/5/42/54217/261-sc-70-6_sml.jpg)
FDG330P
Manufacturer Part Number
FDG330P
Description
MOSFET P-CH 12V 2A SC70-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDG330P.pdf
(5 pages)
Specifications of FDG330P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
110 mOhm @ 2A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
7nC @ 4.5V
Input Capacitance (ciss) @ Vds
477pF @ 6V
Power - Max
480mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.11 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
6.8 S
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2 A
Power Dissipation
750 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDG330P
Manufacturer:
IR
Quantity:
25 562
Part Number:
FDG330P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Electrical Characteristics
Symbol
Off Characteristics
BV
∆BV
I
I
I
On Characteristics
V
∆V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
FS
GS(th)
DS(on)
iss
oss
rss
SD
∆T
∆T
g
gs
gd
GS(th)
DSS
θJA
DSS
J
J
the drain pins. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
a.)
b.)
170°C/W when mounted on a 1 in
260°C/W when mounted on a minimum pad.
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
θJC
is guaranteed by design while R
Parameter
(Note 2)
2
(Note 2)
pad of 2 oz. copper.
θCA
is determined by the user's board design.
V
f = 1.0 MHz
V
V
V
V
T
A
V
I
V
V
V
V
I
V
V
V
V
V
V
V
DS
DD
GS
DS
GS
D
D
= 25°C unless otherwise noted
GS
DS
GS
GS
DS
GS
GS
GS
GS
GS
DS
GS
= –250 µA, Referenced to 25°C
= –250 µA, Referenced to 25°C
= –6.0 V,
= –6.0 V,
= –4.5 V, R
= –6.0 V,
= –4.5 V
= 0 V,
= –10 V, V
= 8 V,
= –8 V,
= V
= –4.5 V, I
= –2.5 V, I
= –1.8 V, I
= –4.5 V, I
= –4.5 V, V
= –5 V,
= 0 V,
GS
Test Conditions
,
I
S
GEN
D
I
V
V
I
I
V
I
I
= –0.62 A
D
D
D
D
D
D
D
D
GS
DS
DS
= –2.0 A, T
DS
GS
= –250 µA
= –250 µA
= –2.0 A
= 1 A,
= –2.0 A,
= –2.0 A
= –1.7 A
= –1.4 A
= 6 Ω
= 0 V
= 0 V
= –5 V
= 0 V
= 0 V,
(Note 2)
J
= 125°C
Min
–0.4
–12
–6
Typ Max Units
–2.7
–0.7
–0.7
107
145
477
186
124
2.3
6.8
0.8
1.4
84
98
10
11
12
18
5
–0.62
–100
–1.5
–1.2
100
110
150
215
148
–1
20
20
22
32
FDG330P Rev D (W)
7
mV/°C
mV/°C
mΩ
µA
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V