FQD4P25TM_WS Fairchild Semiconductor, FQD4P25TM_WS Datasheet - Page 2
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FQD4P25TM_WS
Manufacturer Part Number
FQD4P25TM_WS
Description
MOSFET P-CH 250V 3.1A DPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQU4P25TU.pdf
(9 pages)
Specifications of FQD4P25TM_WS
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.1 Ohm @ 1.55A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
3.1A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
420pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
2.1 Ohms
Drain-source Breakdown Voltage
- 250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.1 A
Power Dissipation
45 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQD4P25TM_WSFQD4P25TM-WS
Manufacturer:
ON/安森美
Quantity:
20 000
©2000 Fairchild Semiconductor International
Electrical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 46.6mH, I
3. I
4. Pulse Test : Pulse width
5. Essentially independent of operating temperature
Off Characteristics
BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
SD
FS
BV
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
DSS
-4.0A, di/dt
T
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= -3.1A, V
300A/ s, V
300 s, Duty cycle
DD
= -50V, R
DD
Parameter
BV
DSS,
G
= 25
Starting T
2%
Starting T
J
= 25°C
T
C
J
= 25°C unless otherwise noted
= 25°C
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= -250 A, Referenced to 25°C
/ dt = 100 A/ s
= 25
= -250 V, V
= -200 V, T
= V
= -40 V, I
= -25 V, V
= -200 V, I
= 0 V, I
= -30 V, V
= 30 V, V
= -10 V, I
= -125 V, I
= -10 V
= 0 V, I
= 0 V, I
Test Conditions
GS
, I
D
S
S
D
= -250 A
D
= -3.1 A
= -4.0 A,
D
DS
= -250 A
GS
DS
D
D
C
= -1.55 A
GS
= -1.55 A
= -4.0 A,
= -4.0 A,
= 0 V
= 125°C
= 0 V
= 0 V,
= 0 V
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
-250
Min
-3.0
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-0.21
1.63
10.3
0.64
Typ
325
140
2.0
9.5
2.7
5.2
65
10
60
14
27
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-12.4
Max
-100
100
-5.0
420
130
-3.1
-5.0
-10
2.1
85
13
30
40
65
14
-1
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Rev. A2, December 2000
Units
V/°C
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
A
V
A
A
C