FQPF9N25C Fairchild Semiconductor, FQPF9N25C Datasheet - Page 5

• Manufacturer Part Number: FQPF9N25C
• Description: MOSFET N-CH 250V 8.8A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF9N25C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 430 mOhm @ 4.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 710pF @ 25V
• Power - Max: 38W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.43 Ohms
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8.8 A
• Power Dissipation: 38 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 11-2. Transient Thermal Response Curve for FQPF9N25C
1 0
1 0
1 0
1 0
1 0
1 0
Figure 11-1. Transient Thermal Response Curve for FQP9N25C
- 1
- 2
-1
-2
1 0
1 0
0
0
- 5
-5
0 . 0 2
0 .0 5
0 .0 2
D = 0 .5
0 .0 5
0 .0 1
D = 0 . 5
0 .0 1
0 .2
0 . 2
0 .1
0 .1
(Continued)
1 0
1 0
s in g le p u ls e
-4
- 4
s in g le p u ls e
t
t
1
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
1 0
1 0
- 3
-3
1 0
1 0
- 2
-2
※
1 0
1 0
1 . Z
2 . D u ty F a c to r , D = t
3 . T
P
P
※
N o te s :
DM
DM
-1
- 1
1 . Z
2 . D u t y F a c to r , D = t
3 . T
θ
J M
N o te s :
J C
( t) = 1 .6 9
- T
θ
J M
J C
( t) = 3 . 2 9
- T
C
= P
t
t
1
1
C
t
t
2
= P
2
D M
1 0
1 0
℃
D M
* Z
0
/W M a x .
0
℃
1
* Z
θ
/t
J C
/W M a x .
2
1
( t)
/t
θ
J C
2
( t)
1 0
1 0
1
1
Rev. A, March 2004