FQU9N25TU Fairchild Semiconductor, FQU9N25TU Datasheet
FQU9N25TU
Manufacturer Part Number
FQU9N25TU
Description
MOSFET N-CH 250V 7.4A IPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQD9N25TM.pdf
(9 pages)
Specifications of FQU9N25TU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
420 mOhm @ 3.7A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
7.4A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
700pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.42 Ohms
Forward Transconductance Gfs (max / Min)
6.8 S
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
7.4 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQU9N25TU
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
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FQU9N25TU Summary of contents
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D - PAK Dimensions in Millimeters ...
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I - PAK Dimensions in Millimeters ...
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