FDD120AN15A0 Fairchild Semiconductor, FDD120AN15A0 Datasheet - Page 10

• Manufacturer Part Number: FDD120AN15A0
• Description: MOSFET N-CH 150V 14A D-PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD120AN15A0

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 770pF @ 25V
• Power - Max: 65W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.12 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
SPICE Thermal Model
REV 23 July 2002
FDD120AN15A0T
CTHERM1 TH 6 1.2e-3
CTHERM2 6 5 2e-3
CTHERM3 5 4 2.5e-3
CTHERM4 4 3 3.15e-3
CTHERM5 3 2 3.3e-3
CTHERM6 2 TL 1.35e-2
RTHERM1 TH 6 6.8e-2
RTHERM2 6 5 1.18e-1
RTHERM3 5 4 2.28e-1
RTHERM4 4 3 3.28e-1
RTHERM5 3 2 5.28e-1
RTHERM6 2 TL 5.78e-1
SABER Thermal Model
SABER thermal model FDD120AN15A0T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =1.2e-3
ctherm.ctherm2 6 5 =2e-3
ctherm.ctherm3 5 4 =2.5e-3
ctherm.ctherm4 4 3 =3.15e-3
ctherm.ctherm5 3 2 =3.3e-3
ctherm.ctherm6 2 tl =1.35e-2
rtherm.rtherm1 th 6 =6.8e-2
rtherm.rtherm2 6 5 =1.18e-1
rtherm.rtherm3 5 4 =2.28e-1
rtherm.rtherm4 4 3 =3.28e-1
rtherm.rtherm5 3 2 =5.28e-1
rtherm.rtherm6 2 tl =5.78e-1
}
RTHERM5
RTHERM1
RTHERM2
RTHERM3
RTHERM6
RTHERM4
th
5
4
3
2
tl
6
JUNCTION
CASE
FDP120AN15A0 / FDD120AN15A0 Rev. B
CTHERM5
CTHERM2
CTHERM6
CTHERM1
CTHERM3
CTHERM4