FDD120AN15A0 Fairchild Semiconductor, FDD120AN15A0 Datasheet - Page 5

• Manufacturer Part Number: FDD120AN15A0
• Description: MOSFET N-CH 150V 14A D-PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD120AN15A0

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 770pF @ 25V
• Power - Max: 65W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.12 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 11. Normalized Gate Threshold Voltage vs
Figure 13. Capacitance vs Drain to Source
1000
100
1.2
1.0
0.8
0.6
0.4
10
5
0.1
-80
C
C
OSS
V
RSS
GS
-40
= 0V, f = 1MHz
Junction Temperature
C
C
DS
V
GD
DS
T
+ C
J
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
0
GD
1
Voltage
40
80
V
T
10
GS
C
C
= V
= 25°C unless otherwise noted
ISS
120
DS
o
, I
C)
C
D
GS
= 250 A
160
+ C
GD
200
150
Figure 14. Gate Charge Waveforms for Constant
Breakdown Voltage vs Junction Temperature
10
1.2
1.1
1.0
0.9
8
6
4
2
0
Figure 12. Normalized Drain to Source
-80
0
I
D
V
= 250 A
DD
-40
= 75V
T
J
, JUNCTION TEMPERATURE (
Gate Currents
0
Q
4
g
, GATE CHARGE (nC)
40
WAVEFORMS IN
DESCENDING ORDER:
FDP120AN15A0 / FDD120AN15A0 Rev. B
80
I
I
D
D
= 14A
= 4A
8
120
o
C)
160
200
12