FQD9N25TM_F080 Fairchild Semiconductor, FQD9N25TM_F080 Datasheet
FQD9N25TM_F080
Manufacturer Part Number
FQD9N25TM_F080
Description
MOSFET N-CH 250V 7.4A DPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQD9N25TM_F080.pdf
(9 pages)
Specifications of FQD9N25TM_F080
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
420 mOhm @ 3.7A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
7.4A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
700pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.42 Ohms
Forward Transconductance Gfs (max / Min)
6.8 S
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
7.4 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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QFET
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FQD9N25TM_F080 Summary of contents
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D - PAK Dimensions in Millimeters ...
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I - PAK Dimensions in Millimeters ...
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