IRFR9110TRPBF Vishay, IRFR9110TRPBF Datasheet

MOSFET P-CH 100V 3.1A DPAK

IRFR9110TRPBF

Manufacturer Part Number
IRFR9110TRPBF
Description
MOSFET P-CH 100V 3.1A DPAK
Manufacturer
Vishay
Datasheet

Specifications of IRFR9110TRPBF

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 1.9A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
3.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.7nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
1.2 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.1 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-3.1A
Drain Source Voltage Vds
-100V
On Resistance Rds(on)
1.2ohm
Rds(on) Test Voltage Vgs
-10V
Leaded Process Compatible
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IRFR9110PBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR9110TRPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
IRFR9110TRPBF
Quantity:
4 000
Company:
Part Number:
IRFR9110TRPBF
Quantity:
15 045
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91279
S10-1135-Rev. C, 10-May-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
(TO-252)
DS
D
DS(on)
g
gs
gd
SD
DPAK
DD
(Max.) (nC)
(nC)
(V)
(nC)
≤ - 4.0 A, dI/dt ≤ 75 A/μs, V
= - 25 V, starting T
(Ω)
G
S
D
(TO-251)
IPAK
a
J
G
= 25 °C, L = 21 mH, R
D S
c
a
a
b
V
DD
GS
≤ V
= - 10 V
e
DPAK (TO-252)
SiHFR9110-GE3
IRFR9110PbF
SiHFR9110-E3
IRFR9110
SiHFR9110
DS
G
, T
e
P-Channel MOSFET
Single
J
- 100
IRFR9110, IRFU9110, SiHFR9110, SiHFU9110
≤ 150 °C.
8.7
2.2
4.1
g
C
= 25 Ω, I
S
= 25 °C, unless otherwise noted
D
Power MOSFET
V
GS
1.2
at - 10 V
AS
= - 3.1 A (see fig. 12).
T
T
C
A
for 10 s
DPAK (TO-252)
SiHFR9110TRL-GE3
IRFR9110TRLPbF
SiHFR9110TL-E3
IRFR9110TRL
SiHFR9110TL
= 25 °C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9110, SiHFR9110)
• Straight Lead (IRFU9110, SiHFU9110)
• Available in Tape and Reel
• P-Channel
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effictiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU Series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
Definition
a
a
a
a
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
, T
P
device
DM
I
AR
GS
DS
AS
AR
D
D
DPAK (TO-252)
SiHFR9110TR-GE3
IRFR9110TRPbF
SiHFR9110T-E3
IRFR9110TR
SiHFR9110T
stg
design,
a
a
- 55 to + 150
a
a
LIMIT
0.020
- 100
260
± 20
- 3.1
- 2.0
0.20
- 3.1
- 5.5
- 12
140
2.5
2.5
25
low
Vishay Siliconix
d
IPAK (TO-251)
SiHFU9110-GE3
IRFU9110PbF
SiHFU9110-E3
IRFU9110
SiHFU9110
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
and
1

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IRFR9110TRPBF Summary of contents

Page 1

... ° °C A for Ω 3.1 A (see fig. 12 ≤ 150 ° Vishay Siliconix device design, low on-resistance DPAK (TO-252) IPAK (TO-251) SiHFR9110TR-GE3 SiHFU9110-GE3 a a IRFR9110TRPbF IRFU9110PbF a SiHFR9110T-E3 SiHFU9110-E3 a IRFR9110TR IRFU9110 a SiHFR9110T SiHFU9110 SYMBOL LIMIT V - 100 DS V ± 3 2 0.20 0.020 ...

Page 2

... IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91279 S10-1135-Rev. C, 10-May-10 IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 = 25 ° 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix Fig Typical Transfer Characteristics www.vishay.com 3 ...

Page 4

... IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91279 S10-1135-Rev. C, 10-May-10 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91279 S10-1135-Rev. C, 10-May-10 IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off) ...

Page 6

... IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. 0.2 µ ...

Page 7

... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91279. Document Number: 91279 S10-1135-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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