IRFR9310PBF Vishay, IRFR9310PBF Datasheet

MOSFET P-CH 400V 1.8A DPAK

IRFR9310PBF

Manufacturer Part Number
IRFR9310PBF
Description
MOSFET P-CH 400V 1.8A DPAK
Manufacturer
Vishay
Datasheets

Specifications of IRFR9310PBF

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 Ohm @ 1.1A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
270pF @ 25V
Power - Max
50W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
7 Ohm @ 10 V
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.8 A
Power Dissipation
50000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-1.8A
Drain Source Voltage Vds
-400V
On Resistance Rds(on)
7ohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91284
S10-1139-Rev. C, 17-May-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and
Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
(TO-252)
D
DS
DS(on)
g
gs
gd
SD
DPAK
(Max.) (nC)
(nC)
(V)
(nC)
≤ - 1.1 A, dI/dt ≤ 450 A/μs, V
(Ω)
G
J
S
= 25 °C, L = 57 mH, R
D
(TO-251)
IPAK
a
G
DPAK (TO-252)
SiHFR9310-GE3
IRFR9310PbF
SiHFR9310-E3
IRFR9310
SiHFR9310
D S
c
a
a
b
V
GS
DD
g
= - 10 V
= 25 Ω, I
≤ V
DS
G
, T
Single
- 400
P-Channel MOSFET
J
3.2
5.0
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
13
AS
≤ 150 °C.
DPAK (TO-252)
SiHFR9310TRL-GE3
IRFR9310TRLPbF
SiHFR9310TL-E3
IRFR9310TRL
SiHFR9310TL
= - 1.8 A (see fig. 12).
C
= 25 °C, unless otherwise noted
S
D
Power MOSFET
V
GS
7.0
at - 10 V
a
a
T
C
for 10 s
a
= 25 °C
a
T
T
C
C
= 100 °C
DPAK (TO-252)
SiHFR9310TR-GE3
IRFR9310TRPbF
SiHFR9310T-E3
IRFR9310TR
SiHFR9310T
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• P-Channel
• Surface Mount (IRFR9310/SiHFR9310)
• Straight Lead (IRFU9310/SiHFU9310)
• Advanced Process Technology
• Fast Switching
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
Definition
a
a
SYMBOL
T
dV/dt
processing
J
a
V
V
E
E
I
a
I
, T
P
DM
I
AR
GS
DS
AS
AR
D
D
stg
DPAK (TO-252)
SiHFR9310TRR-GE3
IRFR9310TRRPbF
SiHFR9310TR-E3
-
-
techniques
- 55 to + 150
LIMIT
- 400
300
± 20
- 1.8
- 1.1
- 7.2
0.40
- 1.8
- 24
5.0
92
50
Vishay Siliconix
d
a
a
to
IPAK (TO-251)
SiHFU9310-GE3
IRFU9310PbF
SiHFU9310-E3
IRFU9310
SiHFU9310
www.vishay.com
achieve
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
low
1

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IRFR9310PBF Summary of contents

Page 1

... IPAK (TO-252) (TO-251 ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and SiHFR9310-GE3 Halogen-free IRFR9310PbF Lead (Pb)-free SiHFR9310-E3 IRFR9310 SnPb SiHFR9310 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS T PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current Linear Derating Factor ...

Page 2

... IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... Fig Typical Output Characteristics Document Number: 91284 S10-1139-Rev. C, 17-May-10 IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 10 1 ° 0.1 100 2.5 2.0 1.5 1.0 0.5 ° 0.0 100 Fig Normalized On-Resistance vs. Temperature Vishay Siliconix ° ° 150 -50V DS 20μs PULSE WIDTH Gate-to-Source Voltage (V) GS Fig ...

Page 4

... IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Vishay Siliconix 500 1MHz iss rss 400 oss iss 300 200 C oss 100 C rss Drain-to-Source Voltage (V) DS Fig Typical Capacitance vs. Drain-to-Source Voltage -1. =-320V DS V =-200V =-80V FOR TEST CIRCUIT Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www ...

Page 5

... RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91284 S10-1139-Rev. C, 17-May-10 IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 125 150 ° 0.001 0. Rectangular Pulse Duration (sec) 1 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig ...

Page 6

... IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Vishay Siliconix D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Driver 15 V 300 TOP 250 BOTTOM 200 150 100 100 Starting T , Junction Temperature ( C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current ...

Page 7

... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91284. Document Number: 91284 S10-1139-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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