FQPF6N90C Fairchild Semiconductor, FQPF6N90C Datasheet
FQPF6N90C
Manufacturer Part Number
FQPF6N90C
Description
MOSFET N-CH 900V 6A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQPF6N90C.pdf
(10 pages)
Specifications of FQPF6N90C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.3 Ohm @ 3A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
1770pF @ 25V
Power - Max
56W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.3 Ohms
Forward Transconductance Gfs (max / Min)
5.5 S
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
6 A
Power Dissipation
56 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Fall Time
60 ns
Rise Time
90 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQPF6N90C
Manufacturer:
FSC
Quantity:
10 000
Company:
Part Number:
FQPF6N90C
Manufacturer:
FAIRCHILD
Quantity:
4 250
Company:
Part Number:
FQPF6N90C
Manufacturer:
TI/NSC
Quantity:
12
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FQPF6N90C
Manufacturer:
Fairchi/ON
Quantity:
17 426
Part Number:
FQPF6N90C
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
FQPF6N90CT
Manufacturer:
ON/安森美
Quantity:
20 000
This is to inform you that a design and/or process change will be made to the following
product(s). This notification is for your information and concurrence.
If you require data or samples to qualify this change, please contact Fairchild Semiconductor
within 30 days of receipt of this notification.
Updated process quality documentation, such as FMEAs and Control Plans, are available for
viewing upon request.
If you have any questions concerning this change, please contact:
PCN Originator:
Name: LEE, JEONGSOO
E-mail: JEONGSOO.LEE@fairchildsemi.com
Phone: 82-32-680-1311
Implementation of change:
Expected 1st Device Shipment Date: 2007/08/26
Earliest Year/Work Week of Changed Product: H35
Change Type Description: Passivation Material, Fab Process Change
Description of Change (From): There are no passivation layer.
Description of Change (To): Adding Passivation layer on front metal.
Reason for Change : To improve product quality.
Qual/REL Plan Numbers : Q20070212
All items were passed.
Qualification :
All items were passed.
Results/Discussion
Test: (Autoclave)
Lot
Q20070212AAACLV
Q20070212ABACLV
Q20070212ACACLV
Test: (High Temperature Gate Bias)
Lot
Q20070212AAHTGB
Q20070212AAHTGB
Q20070212ABHTGB
Q20070212ABHTGB
DESIGN/PROCESS CHANGE NOTIFICATION -- FINAL
Technical Contact:
Name: LEE, JEONGSOO
E-mail: JEONGSOO.LEE@fairchildsemi.com
Phone: 82-32-680-1311
Device
FQPF6N90C
FQPF6N90C
FQPF6N90C
FQPF6N90C
Device
FQPF6N90C
FQPF6N90C
FQPF6N90C
500-HOURS
0/77
0/77
96-HOURS
0/77
0/77
0/77
1000-HOURS
0/77
0/77
Date Issued On : 2007/06/26
Date Created : 2007/05/17
Failure Code
Failure Code
PCN# : Q2072004
Pg. 1
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Datasheet:
FQPF6N90C Summary of contents
Page 1
... Lot Device Q20070212AAACLV FQPF6N90C Q20070212ABACLV FQPF6N90C Q20070212ACACLV FQPF6N90C Test: (High Temperature Gate Bias) Lot Device Q20070212AAHTGB FQPF6N90C Q20070212AAHTGB FQPF6N90C Q20070212ABHTGB FQPF6N90C Q20070212ABHTGB FQPF6N90C Date Created : 2007/05/17 Date Issued On : 2007/06/26 96-HOURS Failure Code 0/77 0/77 0/77 500-HOURS 1000-HOURS 0/77 0/77 0/77 0/77 ...
Page 2
... Lot Device Q20070212AATHBT Q20070212ABTHBT Q20070212ACTHBT Test: -65C, 150C (Temperature Cycle) Lot Device Q20070212AATMCL1 FQPF6N90C Q20070212AATMCL1 FQPF6N90C Q20070212ABTMCL1 FQPF6N90C Q20070212ABTMCL1 FQPF6N90C Q20070212ACTMCL1 FQPF6N90C Q20070212ACTMCL1 FQPF6N90C Product Id Description : There are some QFET products. Affected FSIDs : FQA10N80C_F109 FQA7N80C_F109 FQA8N90C_F109 FQAF11N90C FQB6N60CTM_WS FQB8N60CTM_WS FQD5N60CTM_NL FQD6N60CTF_WS ...