IRFL214PBF Vishay, IRFL214PBF Datasheet - Page 6

• Manufacturer Part Number: IRFL214PBF
• Description: MOSFET N-CH 250V 790MA SOT223
• Manufacturer: Vishay

Specifications of IRFL214PBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 470mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 790mA
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 140pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.79 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 790mA
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

IRFL214, SiHFL214
Vishay Siliconix
www.vishay.com
6
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required I
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Fig. 12a - Unclamped Inductive Test Circuit
to obtain
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Fig. 13a - Basic Gate Charge Waveform
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GS
V
G
R
10 V
g
Q
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V
DS
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Charge
Q
Q
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D.U.T.
0.01 Ω
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Fig. 12c - Maximum Avalanche Energy vs. Drain Current
+
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DD
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
12 V
DS
Fig. 13b - Gate Charge Test Circuit
V
GS
Same type as D.U.T.
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
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S10-1257-Rev. C, 31-May-10
Document Number: 91194
D.U.T.
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D
DS
+
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