ZVNL110A Diodes Zetex, ZVNL110A Datasheet

MOSFET N-CH 100V 320MA TO92-3

ZVNL110A

Manufacturer Part Number

ZVNL110A

Description

MOSFET N-CH 100V 320MA TO92-3

Manufacturer

Diodes Zetex

Type

Small Signalr

Datasheet

1.ZVNL110ASTOB.pdf (1 pages)

Specifications of ZVNL110A

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

3 Ohm @ 500mA, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

320mA

Vgs(th) (max) @ Id

1.5V @ 1mA

Input Capacitance (ciss) @ Vds

75pF @ 25V

Power - Max

700mW

Mounting Type

Through Hole

Package / Case

TO-92-3 (Standard Body), TO-226

Number Of Elements

1

Polarity

N

Channel Mode

Enhancement

Drain-source On-res

3Ohm

Drain-source On-volt

100V

Gate-source Voltage (max)

±20V

Continuous Drain Current

320mA

Power Dissipation

700mW

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Through Hole

Pin Count

3

Package Type

E-Line

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

-

Lead Free Status / Rohs Status

Compliant

Other names

TN0110N3

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

ZVNL110A

Manufacturer:

ZETEX

Quantity:

438

Current page: 1 of 1
Download datasheet (28Kb)

N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 – MARCH 94

FEATURES

*

*

*

ABSOLUTE MAXIMUM RATINGS.

ELECTRICAL CHARACTERISTICS (at T

PARAMETER

Drain-Source Voltage

PARAMETER

Drain-Source Breakdown

Voltage

Gate-Body Leakage

On-State Drain Current(1)

Continuous Drain Current at T

Pulsed Drain Current

Gate Source Voltage

Power Dissipation at T

Operating and Storage Temperature Range

Gate-Source Threshold

Voltage

Zero Gate Voltage Drain

Current

Static Drain-Source On-State

Resistance (1)

Forward Transconductance

(1)(2)

Input Capacitance (2)

Common Source Output

Capacitance (2)

Reverse Transfer Capacitance

(2)

Turn-On Delay Time (2)(3)

Rise Time (2)(3)

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

100 Volt V

R

Low threshold voltage

DS(on)

=3

DS

amb

=25°C

amb

SYMBOL MIN.

BV

V

I

I

I

R

g

C

C

C

t

t

t

t

GSS

DSS

D(on)

d(on)

r

d(off)

f

fs

GS(th)

DS(on)

iss

oss

rss

=25°C

DSS

100

0.75

750

225

3-400

amb

V

SYMBOL

V

I

I

P

T

D

DM

tot

j

DS

GS

= 25°C unless otherwise stated).

:T

MAX. UNIT CONDITIONS.

1.5

100

10

500

4.5

3.0

75

25

8

7

12

15

13

stg

V

V

nA

mA

mS

pF

pF

pF

ns

ns

ns

ns

A

A

I

ID=1mA, V

V

V

V

(2)

V

V

V

V

V

V

D

GS

DS

DS

DS

GS

GS

DS

DS

DD

=1mA, V

-55 to +150

= 20V, V

=100 V, V

=80 V, V

=25 V, V

=5V,I

=10V, I

=25V,I

=25 V, V

VALUE

25V, V

100

320

700

ZVNL110A

6

20

D

TO92 Compatible

=250mA

D

GS

D

DS

=500mA

=500mA

GS

D

GS

GS

GS

=0V

G

= V

DS

GS

=10V, I

S

=0V, T=125°C

=5V

=0V, f=1MHz

E-Line

=0V

=0

GS

UNIT

D

mW

mA

°C

=1A

V

A

V

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