SI7464DP-T1-E3 Vishay, SI7464DP-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI7464DP-T1-E3
• Description: MOSFET N-CH 200V 1.8A PPAK 8SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7464DP-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 240 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.8A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 260mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7464DP-T1-E3TR

Si7464DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.4
- 0.8
- 1.2
0.8
0.4
0.0
0.01
- 50
0.1
2
1
10
- 4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
T
J
- Temperature (°C)
25
10
- 3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
I
Limited by R
D
75
= 250 μA
0.001
0.01
0.1
10
10
100
1
0.1
- 2
DS(on)
125
Single Pulse
T
*
A
V
Limited
= 25 °C
150
I
DS
D(on)
1
Square Wave Pulse Duration (s)
Safe Operating Area
- Drain-to-Source Voltage (V)
10
- 1
BV
DSS
10
Limited
50
40
30
20
10
0
0.001
1
100
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
0.01
I
DM
1000
Limited
Single Pulse Power
10
Notes:
1 .
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
Duty Cycle, D =
0.1
JM
Time (s)
- T
t
1
A
S09-0227-Rev. C, 09-Feb-09
= P
t
1
2
Document Number: 72052
DM
Z
thJA
thJA
100
t
t
1
2
10
(t)
= 58 °C/W
100
600
600