IRFR9220TRLPBF Vishay, IRFR9220TRLPBF Datasheet

MOSFET P-CH 200V 3.6A DPAK

IRFR9220TRLPBF

Manufacturer Part Number
IRFR9220TRLPBF
Description
MOSFET P-CH 200V 3.6A DPAK
Manufacturer
Vishay
Datasheet

Specifications of IRFR9220TRLPBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 2.2A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
340pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
P Channel
Continuous Drain Current Id
-3.6A
Drain Source Voltage Vds
-200V
On Resistance Rds(on)
1.5ohm
Rds(on) Test Voltage Vgs
-10V
Leaded Process Compatible
Yes
Configuration
Single
Resistance Drain-source Rds (on)
1.5 Ohms
Drain-source Breakdown Voltage
- 200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.6 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
19 ns
Minimum Operating Temperature
- 55 C
Rise Time
27 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR9220TRLPBF
Manufacturer:
VISHAY
Quantity:
660
Part Number:
IRFR9220TRLPBF
Manufacturer:
VISHAY
Quantity:
665
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91283
S10-1139-Rev. D, 17-May-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and
Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
(TO-252)
D
DS
DS(on)
g
gs
gd
SD
DPAK
DD
(Max.) (nC)
(nC)
(V)
(nC)
≤ - 3.9 A, dI/dt ≤ 95 A/μs, V
= - 50 V, Starting T
(Ω)
G
S
D
(TO-251)
IPAK
a
J
G
DPAK (TO-252)
SiHFR9220-GE3
IRFR9220PbF
SiHFR9220-E3
IRFR9220
SiHFR9220
= 25 °C, L = 35 mH, R
D S
c
a
a
b
V
DD
GS
≤ V
= - 10 V
e
DS
, T
G
e
Single
J
- 200
P-Channel MOSFET
IRFR9220, IRFU9220, SiHFR9220, SiHFU9220
≤ 150 °C.
3.3
20
11
DPAK (TO-252)
SiHFR9220TRL-GE3
IRFR9220TRLPbF
SiHFR9220TL-E3
IRFR9220TRL
SiHFR9220TL
g
C
= 25 Ω, I
= 25 °C, unless otherwise noted
Power MOSFET
S
D
V
GS
1.5
at - 10 V
AS
a
a
= - 3.6 A (see fig. 12).
T
T
C
A
for 10 s
a
= 25 °C
= 25 °C
a
a
T
T
C
C
= 100 °C
DPAK (TO-252)
SiHFR9220TRR-GE3
IRFR9220TRRPbF
SiHFR9220TR-E3
IRFR9220TRR
SiHFR9220TR
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9220, SiHFR9220)
• Straight Lead (IRFUFU9220, SiHFU9220)
• Available in Tape and Reel
• P-Channel
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third Power MOSFETs technology is the key to Vishay
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
Definition
SYMBOL
a
T
a
dV/dt
J
V
V
E
E
I
I
, T
P
DM
I
AR
GS
DS
AS
AR
D
a
D
a
stg
a
DPAK (TO-252)
SiHFR9220TR-GE3
IRFR9220TRPbF
SiHFR9220T-E3
IRFR9220TR
SiHFR9220T
- 55 to + 150
LIMIT
0.020
- 200
260
± 20
- 3.6
- 2.3
0.33
- 3.6
- 5.0
- 14
310
a
4.2
2.5
a
42
Vishay Siliconix
d
a
a
a
IPAK (TO-251)
SiHFU9220-GE3
IRFU9220PbF
SiHFU9220-E3
IRFU9220
SiHFU9220
www.vishay.com
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
1

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IRFR9220TRLPBF Summary of contents

Page 1

... The straight lead version (IRFU, SiHFU series) is for through-hole P-Channel MOSFET mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. DPAK (TO-252) DPAK (TO-252) a SiHFR9220TRL-GE3 SiHFR9220TRR-GE3 a IRFR9220TRLPbF IRFR9220TRRPbF a SiHFR9220TL-E3 SiHFR9220TR-E3 a IRFR9220TRL IRFR9220TRR a SiHFR9220TL SiHFR9220TR = 25 ° ...

Page 2

... IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91283 S10-1139-Rev. D, 17-May-10 IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 = 25 ° 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix Fig Typical Transfer Characteristics www.vishay.com 3 ...

Page 4

... IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91283 S10-1139-Rev. D, 17-May-10 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91283 S10-1139-Rev. D, 17-May-10 IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) d(off) ...

Page 6

... IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Driver 15 V Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...

Page 7

... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91283. Document Number: 91283 S10-1139-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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