FDMS7558S Fairchild Semiconductor, FDMS7558S Datasheet

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FDMS7558S

Manufacturer Part Number
FDMS7558S
Description
MOSFET N-CH 25V 32A POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMS7558S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.25 mOhm @ 32A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
32A
Vgs(th) (max) @ Id
3V @ 1mA
Gate Charge (qg) @ Vgs
119nC @ 10V
Input Capacitance (ciss) @ Vds
7770pF @ 13V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
Power56
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMS7558STR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS7558S
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDMS7558S
Quantity:
3 000
©2009 Fairchild Semiconductor Corporation
FDMS7558S Rev.C
FDMS7558S
N-Channel PowerTrench
25 V, 49 A, 1.25 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
DS
GS
AS
D
J
θJC
θJA
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMS7558S
DS(on)
DS(on)
= 1.25 mΩ at V
= 1.75 mΩ at V
Top
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
GS
GS
FDMS7558S
-Continuous
= 10 V, I
= 4.5 V, I
-Continuous (Silicon limited)
-Pulsed
Power 56
Device
D
D
= 32 A
= 28 A
T
®
C
D
= 25 °C unless otherwise noted
SyncFET
D
Parameter
D
D
Bottom
DS(on)
Power 56
Package
1
S
TM
T
S
T
T
T
T
General Description
The FDMS7558S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
C
C
C
A
A
DS(on)
S
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
Synchronous Rectifier for Synchronous Buck Converters
Notebook
Server
Telecom
High Efficiency DC-DC Switch Mode Power Supplies
Pin 1
G
while maintaining excellent switching performance. This
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
(Note 4)
D
D
D
D
5
6
7
8
Tape Width
12 mm
-55 to +150
Ratings
199
180
288
±20
2.5
1.4
25
49
32
89
50
December 2009
www.fairchildsemi.com
3000 units
4
3
2
1
Quantity
G
S
S
S
Units
°C/W
mJ
°C
W
V
V
A

Related parts for FDMS7558S

FDMS7558S Summary of contents

Page 1

... FDMS7558S FDMS7558S ©2009 Fairchild Semiconductor Corporation FDMS7558S Rev.C ® TM SyncFET General Description The FDMS7558S has been designed to minimize losses power conversion application. Advancements in both silicon and = 28 A package technologies have been combined to offer the lowest D r while maintaining excellent switching performance. This ...

Page 2

... Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. ° 288 mJ is based on starting N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. FDMS7558S Rev °C unless otherwise noted A Test Conditions mA mA, referenced to 25 ° ...

Page 3

... JUNCTION TEMPERATURE ( , T J Figure 3. Normalized On Resistance vs Junction Temperature 180 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 120 125 1.5 2.0 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMS7558S Rev °C unless otherwise noted J µ 2 100 125 150 - 3.0 3.5 ...

Page 4

... THIS AREA IS 1 LIMITED SINGLE PULSE T = MAX RATED J 0 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDMS7558S Rev °C unless otherwise noted J 8000 1000 200 200 150 100 100 100 1000 Figure 10. Maximum Continuous Drain ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMS7558S Rev °C unless otherwise noted J SINGLE PULSE C/W θ RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR PEAK θJA θ 100 ...

Page 6

... MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS7558S di/dt = 300 TIME (ns) Figure 14. FDMS7558S SyncFET body diode reverse recovery characteristic FDMS7558S Rev.C (continued) Schottky barrier diodes exhibit significant leakage at high temper- ature and high reverse voltage. This will increase the power in the device µ ...

Page 7

... Dimensional Outline and Pad Layout FDMS7558S Rev.C 7 www.fairchildsemi.com ...

Page 8

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMS7558S Rev.C ® FlashWriter * Power-SPM™ FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ ...

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