IRFR214TRR Vishay, IRFR214TRR Datasheet
IRFR214TRR
Specifications of IRFR214TRR
Related parts for IRFR214TRR
IRFR214TRR Summary of contents
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... ° °C A for Ω 2.2 A (see fig. 12 ≤ 150 °C. J Vishay Siliconix device design, low on-resistance DPAK (TO-252) IPAK (TO-251 IRFU214PbF a - SiHFU214- IRFR214TRR IRFU214 a a SiHFR214TR SiHFU214 SYMBOL LIMIT V 250 DS V ± 2 1.4 I 8.8 DM 0.20 0.020 E 190 2.5 ...
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... IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91269 S-82987-Rev. B, 19-Jan-09 IRFR214, IRFU214, SiHFR214, SiHFU214 = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...
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... IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91269 S-82987-Rev. B, 19-Jan-09 ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91269 S-82987-Rev. B, 19-Jan-09 IRFR214, IRFU214, SiHFR214, SiHFU214 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms Vishay Siliconix D.U. d(off) f www.vishay.com 5 ...
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... IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix V DS Vary t to obtain p required I AS D.U. Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 0.01 Ω Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current ...
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... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91269. Document Number: 91269 S-82987-Rev ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...